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PDF SSM20P02H Data sheet ( Hoja de datos )

Número de pieza SSM20P02H
Descripción P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Silicon Standard 
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SSM20P02H,J
P-CHANNEL ENHANCEMENT-MODE
POWER MOSFET
Simple drive requirement
2.5V gate drive capability
Fast switching
D
G
S
Description
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BV DSS
R DS(ON)
ID
-20V
52mΩ
-18A
G D S TO-252(H)
The TO-252 package is widely preferred for all commercial and
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(SSM20P02J) is available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
ID@TA=100
IDM
PD@TA=25
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
TO-251(J)
Rating
- 20
± 12
-18
-14
-50
31.25
0.25
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
4.0
110
Unit
/W
/W
Rev.2.01 6/26/2003
www.SiliconStandard.com
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SSM20P02H pdf
SSM20P02H,J
8
I D = -8A
V DS = -16V
6
4
2
0
0 5 10 15
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
20
10000
1000
100
f=1.0MHz
Ciss
Coss
Crss
10
1 7 13 19
-V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T j =150 o C
1
T j =25 o C
0
0.2 0.5 0.8 1.1 1.4
-V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.2
0.9
0.6
0.3
0
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
150
Rev.2.01 6/26/2003
www.SiliconStandard.com
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