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PDF SSM20N03S Data sheet ( Hoja de datos )

Número de pieza SSM20N03S
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Silicon Standard 
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SSM20N03S,P
N-CHANNEL ENHANCEMENT-MODE
POWER MOSFET
Dynamic dv/dt rating
Repetitive-avalanche rated
Fast switching
Simple drive requirement
Description
D
G
S
BVDSS
R DS(ON)
ID
30V
52mΩ
20A
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial and
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(SSM20N03P) is available for low-footprint applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
G D S TO-263
G
D
S
Rating
30
± 20
20
13
58
31
0.25
-55 to 150
-55 to 150
TO-220
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-case
Thermal Resistance Junction-case
Rthj-amb
Thermal Resistance Junction-ambient
Max.
Max.
Value
4.0
62
Unit
/W
/W
Rev.2.01 6/26/2003
www.SiliconStandard.com
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SSM20N03S pdf
SSM20N03S,P
12
Id=10A
10 V D =16V
V D =20V
8 V D =24V
6
4
2
0
0 2 4 6 8 10 12
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
1000
Ciss
Coss
100
Crss
10
1
6 11 16 21 26 31
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T j = 150 o C
1
T j = 25 o C
0.1
0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
3
2
1
0
-50 0 50 100 150
T j , Junction Temperature( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Rev.2.01 6/26/2003
www.SiliconStandard.com
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