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PDF SSM90T03GS Data sheet ( Hoja de datos )
| Número de pieza | SSM90T03GS | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Silicon Standard | |
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SSM90T03GP,S
N-channel Enhancement-mode Power MOSFET
Low gate-charge
Simple drive requirement
D
Fast switching
G
Pb-free, RoHS compliant.
S
DESCRIPTION
BVDSS
RDS(ON)
ID
The SSM90T03GS is in a TO-263 package, which is widely used for
commercial and industrial surface mount applications. This device is
suitable for low voltage applications such as DC/DC converters.
The through-hole version, the SSM90T03GP in TO-220, is available for
vertical-mounting, where a small footprint is required on the board, and/or
an external heatsink is to be attached.
GD S
ABSOLUTE MAXIMUM RATINGS
G
D
S
30V
4mΩ
75A
TO-263 (S)
TO-220 (P)
Symbol
VDS
VGS
ID @ Tc=25°C
ID @ Tc=100°C
IDM
PD @ Tc=25°C
EAS
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS = 4.5V
Continuous Drain Current, VGS = 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
RΘJC
RΘJA
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Rating
30
±20
75
63
350
96
0.7
29
-55 to 150
-55 to 150
Value
1.3
62
Units
V
V
A
A
A
W
W/°C
mJ
°C
°C
Units
°C/W
°C/W
2/17/2005 Rev.2.3
www.SiliconStandard.com
1 of 5
1 page  
SSM90T03GP,S
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
2/17/2005 Rev.2.3
www.SiliconStandard.com
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5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SSM90T03GS.PDF ] | |
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