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PDF SSM75T10GS Data sheet ( Hoja de datos )

Número de pieza SSM75T10GS
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Silicon Standard 
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SSM75T10GP,S
N-channel Enhancement-mode Power MOSFET
Low gate-charge
Simple drive requirement
D
Fast switching
G
Pb-free, RoHS compliant.
S
DESCRIPTION
BV DSS
R DS(ON)
ID
100V
15m
72A
The SSM75T10GS is in a TO-263 package, which is widely used for
commercial and industrial surface mount applications, and is well suited
for low voltage applications such as DC/DC converters. The through-hole
version, the SSM75T10GP in TO-220, is available for low-footprint vertical
mounting. These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
G D S TO-263 (S)
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID @ TC=25°C
ID @ TC=100°C
IDM
PD @ TC=25°C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V3
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
G
D
S
TO-220 (P)
Rating
100
±20
72
45
260
138
1.11
Units
V
V
A
A
A
W
W/°C
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
-55 to 150
-55 to 150
°C
°C
Max.
Max.
Value
0.9
62
Units
°C/W
°C/W
2/16/2005 Rev.1.1
www.SiliconStandard.com
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SSM75T10GS pdf
SSM75T10GP,S
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
2/16/2005 Rev.1.1
www.SiliconStandard.com
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