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PDF SSM9926GEO Data sheet ( Hoja de datos )
| Número de pieza | SSM9926GEO | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Silicon Standard | |
| Logotipo |  |
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SSM9926GEO
N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Low on-resistance
Capable of 2.5V gate drive
Low drive current
Surface-mount package
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Description
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
RoHS compliant.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TA=25°C
ID @ TA=70°C
IDM
PD @ TA=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-amb
Thermal Resistance Junction-ambient
BV DSS
R DS(ON)
ID
20V
28mΩ
4.6A
D1 D2
G1 G2
S1 S2
Rating
20
± 12
4.6
3.7
20
1
0.008
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Value
125
Unit
°C/W
Rev.2.10 1/29/2005
www.Sil iconStandard .com
1 of 6
1 page  
SSM9926GEO
12
I D =4.6A
10
8
6
V DS =10V
V DS =15V
V DS =20V
4
2
0
0 5 10 15 20 25
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
1000 f=1.0MHz
Ciss
Coss
100
Crss
10
1 5 9 13 17 21 25 29
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T j =150 o C
1
T j =25 o C
0.1
0.01
0
0.4 0.8
V SD (V)
1.2
1.6
Fig 11. Forward Characteristic of
Reverse Diode
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
-50 0
50 100 150
Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
Rev.2.10 1/29/2005
www.SiliconStandard.com
5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSM9926GEO.PDF ] | |
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