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PDF SSM9928GEO Data sheet ( Hoja de datos )
| Número de pieza | SSM9928GEO | |
| Descripción | DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS | |
| Fabricantes | Silicon Standard | |
| Logotipo |  |
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SSM9928(G)EO
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Low on-resistance
Capable of 2.5V gate drive
Ideal for DC/DC battery applications
Description
G2
S2
S2
D2
TSSOP-8
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G1
S1
S1
D1
BV DSS
RDS(ON)
ID
20V
23mΩ
5A
D1 D2
G1 G2
S1 S2
This device is available with Pb-free lead finish (second-level interconnect) as SSM9928GEO.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
VGS
ID @ TA=25°C
ID @ TA=70°C
IDM
PD @ TA=25°C
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 4.5V
Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
20
±12
5
3.5
25
1
0.008
V
V
A
A
A
W
W/°C
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
°C
°C
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Max.
Value
125
Unit
°C/W
Rev.2.01 12/06/2004
www.SiliconStandard.com
1 of 6
1 page  
SSM9928(G)EO
8
I D =5A
7
6
VDS =10V
5 VDS =15V
VDS =20V
4
3
2
1
0
0 5 10 15 20
Q G , Total Gate Charge (nC)
25
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
1000
Ciss
Coss
Crss
100
10
1
7 13 19 25
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T j =150 o C
1
T j =25 o C
0.1
0.01
0.2
0.5
V SD (V)
0.8
1.1
Fig 11. Forward Characteristic of
Reverse Diode
1.6
1.2
0.8
0.4
0
-50 0
50 100 150
Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
Rev.2.01 12/06/2004
www.SiliconStandard.com
5 of 6
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSM9928GEO.PDF ] | |
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