|
|
PDF TSB4N60M Data sheet ( Hoja de datos )
| Número de pieza | TSB4N60M | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Truesemi | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de TSB4N60M (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
TSB4N60M / TSI4N60M
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 4.0A, 600V, RDS(on) = 2.6 @VGS = 10 V
• Low gate charge ( typical 16nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
D
D2-PAK
GS
GDS
I2-PAK
G
S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
TSB4N60M
TSI4N60M
600
4.0 4.0*
2.4 2.4 *
16 16 *
30
160
10
4.5
100 33
0.8 0.26
-55 to +150
300
Thermal Characteristics
Symbol
RJC
RCS
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TSB4N60M
1.25
0.5
62.5
TSI4N60M
3.79
--
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
1 page  
Typical Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve
for TSB4N60M
Figure 11-2. Transient Thermal Response Curve
for TSI4N60M
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TSB4N60M.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TSB4N60M | N-Channel MOSFET | Truesemi |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |