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PDF TSD2N60MZ Data sheet ( Hoja de datos )
| Número de pieza | TSD2N60MZ | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Truesemi | |
| Logotipo |  |
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TSD2N60MZ / TSU2N60MZ
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 1.9A, 600V, RDS(on) = 5.00Ω @VGS = 10 V
• Low gate charge ( typical 9nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• ESD improved capability
• Improved dv/dt capability
G
DS
D-PAK ( TO-252 )
GD S
I-PAK ( TO-251 )
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
EAR
dv/dt
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
TSD2N60MZ / TSU2N60MZ
600
1.9
1.14
7.6
± 30
120
4.4
4.5
44
0.35
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Typ Max
- 2.87
- 50
- 110
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
1 page  
Gate Charge Test Circuit & Waveform
50KΩ
SameType
asDUT
12V
200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS
RG
RL
VDD
DUT
VDS 90%
VGS10%
td(on)
tr
ton
td(off)
tf
toff
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
RG
VDS
ID
L
EAS=--21-- LIAS2
BVDSS
--------------------
BVDSS-VDD
BVDSS
IAS
VDD
ID(t)
DUT
VDD
VDS(t)
tp Time
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TSD2N60MZ.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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