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What is TSA60R070S1?

This electronic component, produced by the manufacturer "Truesemi", performs the same function as "N-Channel MOSFET".


TSA60R070S1 Datasheet PDF - Truesemi

Part Number TSA60R070S1
Description N-Channel MOSFET
Manufacturers Truesemi 
Logo Truesemi Logo 


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TSA60R070S1
600V 47A N-Channel SJ-MOSFET
General Description
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
Features
• 650V @TJ = 150
• Typ. RDS(on) = 60mΩ
• Ultra Low gate charge (typ. Qg = 170nC)
• 100% avalanche tested
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25)
-Continuous (TC = 100)
Drain Current Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
dv/dt Peak Diode Recovery dv/dt
(Note 3)
dvds/dt Drain Source voltage slope (Vds=480V)
PD
TJ, TSTG
TL
Power Dissipation (TC = 25)
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθCS Thermal Resistance, Case-to-Sink Typ.
RθJA Thermal Resistance, Junction-to-Ambient
© 2015 Truesemi Semiconductor Corporation
Value
600
47*
29*
140
±30
1135
9.3
1.72
15
50
391
-55 to +150
300
Value
0.32
0.5
62
Unit
V
A
A
V
mJ
A
mJ
V/ns
V/ns
W
Unit
/W
/W
/W
www.truesemi.com

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TSA60R070S1 equivalent
Typical Performance Characteristics
Typ. gate charge
Avalanche energy
VGS=f(Qg), ID=23A pulsed
Forward characteristics of reverse diode
EAS=f(Tj); ID=9.3A; VDD=50 V
Drain-source breakdown voltage
IF=f(VSD); parameter: Tj
© 2015 Truesemi Semiconductor Corporation
VBR(DSS)=f(Tj); ID=0.25mA
5
www.truesemi.com


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for TSA60R070S1 electronic component.


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Featured Datasheets

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TSA60R070S1The function is N-Channel MOSFET. TruesemiTruesemi
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