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Número de pieza | TSF80R1K3S1 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Truesemi | |
Logotipo | ||
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No Preview Available ! TSF80R1K3S1
800V 4A N-Channel SJ-MOSFET
General Description
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
Features
• 850V @TJ = 150 ℃
• Typ. RDS(on) = 1.1Ω
• Ultra Low gate charge (typ. Qg = 15nC)
• 100% avalanche tested
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃)
-Continuous (TC = 100℃)
Drain Current – Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
dv/dt Peak Diode Recovery dv/dt
(Note 3)
PD
TJ, TSTG
TL
Power Dissipation (TC = 25℃)
-Derate above 25℃
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθCS Thermal Resistance, Case-to-Sink Typ.
RθJA Thermal Resistance, Junction-to-Ambient
© 2015 Truesemi Semiconductor Corporation
Value
800
4*
2.5*
11*
±30
46
1
0.2
15
26
0.3
-55 to +150
300
Value
4.9
--
80
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Unit
℃/W
℃/W
℃/W
www.truesemi.com
1 page Typical Performance Characteristics
© 2015 Truesemi Semiconductor Corporation
5
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5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet TSF80R1K3S1.PDF ] |
Número de pieza | Descripción | Fabricantes |
TSF80R1K3S1 | N-Channel MOSFET | Truesemi |
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