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PDF TSP80R600S1 Data sheet ( Hoja de datos )
| Número de pieza | TSP80R600S1 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Truesemi | |
| Logotipo |  |
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TSP80R600S1
800V 9A N-Channel SJ-MOSFET
General Description
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
Features
• 850V @TJ = 150 ℃
• Typ. RDS(on) = 0.55Ω
• Ultra Low gate charge (typ. Qg = 35nC)
• 100% avalanche tested
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃)
-Continuous (TC = 100℃)
Drain Current – Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
dv/dt Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25℃)
TJ, TSTG
TL
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθCS Thermal Resistance, Case-to-Sink Typ.
RθJA Thermal Resistance, Junction-to-Ambient
© 2015 Truesemi Semiconductor Corporation
Value
800
9*
5.5*
26
±30
120
2
0.32
15
83
-55 to +150
300
Value
1.5
0.5
62
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
℃
℃
Unit
℃/W
℃/W
℃/W
www.truesemi.com
1 page  
Typical Performance Characteristics
Figure 13: Maximum Transient Thermal Impedance
Tj(°C)
Figure 14: Avalanche energy
© 2015 Truesemi Semiconductor Corporation
5
www.truesemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TSP80R600S1.PDF ] | |
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