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PDF TSP13N50M Data sheet ( Hoja de datos )
| Número de pieza | TSP13N50M | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Truesemi | |
| Logotipo |  |
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TSP13N50M/TSF13N50M
500V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 13A,500V,Max.RDS(on)=0.48 Ω @ VGS =10V
• Low gate charge(typical 45nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TJ=25℃ unless otherwise specified
Symbol
VDSS
VGS
ID
IDM
EAS
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
TC = 25℃
TC = 100℃
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25℃)
-Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
TSP13N50M TSF13N50M
500
±30
13 13*
8 8*
52 52*
860
19.5
4.5
195 48
1.56 0.39
-55 to +150
300
* Drain current limited by maximum junction temperature.
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance,Junction-to-Case
Thermal Resistance,Case-to-Sink Typ.
Thermal Resistance,Junction-to-Ambient
TSP13N50M
0.64
0.5
62.5
TSF13N50M
2.58
--
62.5
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/℃
℃
℃
Units
℃/W
℃/W
℃/W
© 2015 Truesemi Semiconductor Corporation
Ver.B2
www.truesemi.com
1 page  
Typical Characteristics
© 2015 Truesemi Semiconductor Corporation
Ver.B2
www.truesemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet TSP13N50M.PDF ] | |
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