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PDF TSD65R700S1 Data sheet ( Hoja de datos )
| Número de pieza | TSD65R700S1 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Truesemi | |
| Logotipo |  |
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TSD65R700S1/TSU65R700S1
650V 7A N-Channel SJ-MOSFET
General Description
Features
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
• 700V @TJ = 150 ℃
• Typ. RDS(on) = 0.6Ω
• Ultra Low gate charge (typ. Qg = 25nC)
• 100% avalanche tested
TSD65R700S1
TSU65R700S1
TO-252
Absolute Maximum Ratings
TO-251
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃)
-Continuous (TC = 100℃)
Drain Current – Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
TSD65R700S1
TSU65R700S1
650
7*
4.6*
18* 18
±30
86
1.7
0.2
dv/dt
PD
TJ, TSTG
TL
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25℃)
-Derate above 25℃
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
15
63 63
0.3 1.67
-55 to +150
300
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθCS Thermal Resistance, Case-to-Sink Typ.
RθJA Thermal Resistance, Junction-to-Ambient
Value
2.0
0.5
62
© 2015 Truesemi Semiconductor Corporation
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Unit
℃/W
℃/W
℃/W
www.truesemi.com
1 page  
Typical Performance Characteristics
ID (A)
Figure 13 On-Resistance vs. Drain Current and Gate Voltage
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance
© 2015 Truesemi Semiconductor Corporation
5
www.truesemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet TSD65R700S1.PDF ] | |
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