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PDF TSF65R380WT Data sheet ( Hoja de datos )

Número de pieza TSF65R380WT
Descripción N-Channel MOSFET
Fabricantes Truesemi 
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TSF65R380WT
650V 11A N-Channel SJ-MOSFET
General Description
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
Features
• 700V @TJ = 150
• Max. RDS(on) = 0.38Ω
• Ultra Low gate charge (typ. Qg = 17.5nC)
• 100% avalanche tested
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
Drain-Source Voltage
Drain Current -Continuous (TC = 25)
-Continuous (TC = 100)
650
11*
7*
IDM Drain Current Pulsed
(Note 1)
33*
VGSS Gate-Source voltage
±30
EAS
PD
TJ, TSTG
TL
Single Pulsed Avalanche Energy (Note 2)
Power Dissipation (TC = 25)
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
270
31
-55 to +150
300
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
Typ.
RθJC Thermal Resistance, Junction-to-Case
--
RθJA Thermal Resistance, Junction-to-Ambient
--
Max.
4.0
62.5
Unit
V
A
A
V
mJ
W
Unit
/W
/W
© 2015 Truesemi Semiconductor Corporation
www.truesemi.com

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TSF65R380WT pdf
Test circuits
Switching times test circuit and waveform for inductive load
Switching times test circuit for inductive load
Switching time waveform
Switching times test
circuit for inductive
load
Unclamped inductive load test circuit and waveform
Unclamped inductive load test circuit
Unclamped inductive waveform
© 2015 Truesemi Semiconductor Corporation
5
www.truesemi.com

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