TSP65R420S1 Datasheet PDF - Truesemi
Part Number | TSP65R420S1 | |
Description | N-Channel MOSFET | |
Manufacturers | Truesemi | |
Logo | ||
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650V 10.5A N-Channel SJ-MOSFET
General Description
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
Features
• 700V @TJ = 150 ℃
• Typ. RDS(on) = 0.38Ω
• Ultra Low gate charge (typ. Qg = 38nC)
• 100% avalanche tested
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃)
-Continuous (TC = 100℃)
Drain Current – Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt
(Note 3)
PD
TJ, TSTG
TL
Power Dissipation (TC = 25℃)
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθCS Thermal Resistance, Case-to-Sink Typ.
RθJA Thermal Resistance, Junction-to-Ambient
© 2015 Truesemi Semiconductor Corporation
Value
650
10.5*
6.7*
30*
±30
210
1.8
0.32
15
83
-55 to +150
300
Value
1.5
0.5
62
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
℃
℃
Unit
℃/W
℃/W
℃/W
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Typical Performance Characteristics
Typ. transfer characteristics
Typ. gate charge
ID=f(VGS); VDS=20V
Avalanche energy
VGS=f(Qg), ID=4.8 A pulsed
Drain-source breakdown voltage
EAS=f(Tj); ID=1.8 A; VDD=50 V
© 2015 Truesemi Semiconductor Corporation
VBR(DSS)=f(Tj); ID=0.25 mA
5
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Information | Total 9 Pages | |
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Download | [ TSP65R420S1.PDF Datasheet ] |
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