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PDF MDV1522 Data sheet ( Hoja de datos )
| Número de pieza | MDV1522 | |
| Descripción | N-Channel Trench MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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MDV1522
Single N-channel Trench MOSFET 30V, 28A, 4.9mΩ
General Description
The MDV1522 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDV1522 is suitable for DC/DC converter and
general purpose applications.
Features
VDS = 30V
ID = 28A @VGS = 10V
RDS(ON)
< 4.9mΩ @VGS = 10V
< 6.8mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
DD DD
DD DD
D
S SSG
GS SS
PDFN33
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25oC (Silicon limited)
TC=25oC (Package limited)
TC=70oC
TA=25oC
TA=70oC
TC=25oC
TC=70oC
TA=25oC
TA=70oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
May. 2011. Version1.2
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
30
±20
56.8
28
28
19.9(3)
16.0(3)
60
27.7
17.7
3.4(3)
2.2(3)
136
-55~150
Unit
V
V
A
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
36
4.5
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 page  
Package Dimension
PowerDFN33 (3.3x3.3mm)
Dimensions are in millimeters, unless otherwise specified
May. 2011. Version1.2
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDV1522.PDF ] | |
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