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MDV1526 Datasheet PDF - MagnaChip

Part Number MDV1526
Description N-Channel Trench MOSFET
Manufacturers MagnaChip 
Logo MagnaChip Logo 



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MDV1526 datasheet, circuit
MDV1526
Single N-channel Trench MOSFET 30V, 24A, 11mΩ
General Description
The MDV1526 uses advanced MagnaChips MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDV1526 is suitable for DC/DC converter and
general purpose applications.
Features
VDS = 30V
ID = 20A @VGS = 10V
RDS(ON)
< 11.0m@VGS = 10V
< 16.4m@VGS = 4.5V
100% UIL Tested
100% Rg Tested
DD DD
DD DD
D
S SSG
GS SS
PDFN33
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25oC (Silicon limited)
TC=25oC (Package limited)
TC=70oC
TA=25oC
TA=70oC
TC=25oC
TC=70oC
TA=25oC
TA=70oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
30
±20
35.6
24
24
13.2(3)
10.6(3)
60
24.5
15.6
3.4(3)
2.2(3)
38
-55~150
Unit
V
V
A
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
36
5.1
Unit
oC/W
May. 2011. Version1.2
1 MagnaChip Semiconductor Ltd.

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MDV1526 equivalent
10
Note : ID = 10A
8
6
4
2
0
0 2 4 6 8 10
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
12
1000
800
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
600
400
200 Coss
Crss
Notes ;
1. VGS = 0 V
2. f = 1 MHz
0
0 5 10 15 20 25
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
30
Operation in This Area
102 is Limited by R DS(on)
10 ms
100 ms
101 1s
10s
DC
100
10-1
Single Pulse
TJ=Max rated
TC=25
10-1
100 101
VDS, Drain-Source Voltage [V]
102
Fig.9 Maximum Safe Operating Area
40
30
20
10
0
25 50 75 100 125 150
TC, Case Temperature []
Fig.10 Maximum Drain Current vs.
Case Temperature
101
D=0.5
0.2
100 0.1
0.05
0.02
10-1 0.01
single pulse
10-2
Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
10-3
10-4 10-3 10-2 10-1 100 101 102 103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
May. 2011. Version1.2
5 MagnaChip Semiconductor Ltd.

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Information Total 7 Pages
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