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MDS1651 Datasheet PDF - MagnaChip

Part Number MDS1651
Description N-Channel Trench MOSFET
Manufacturers MagnaChip 
Logo MagnaChip Logo 

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MDS1651
Single N-Channel Trench MOSFET 30V, 11.6A, 17m
General Description
The MDS1651 uses advanced MagnaChips MOSFET
Technology, which provides low on-state resistance,
high switching performance and excellent reliability.
MDS1651 is suitable device for PWM, Load Switching
and general purpose applications.
Features
à VDS = 30V
à ID = 11.6A@VGS = 10V
à RDS(ON)
< 17m@VGS = 10V
< 22m@VGS = 4.5V
Applications
à Portable application
5(D)
6(D)
7(D)
8(D)
D
4(G)
3(S)
2(S)
1(S)
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current
Power Dissipation (1)
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
G
TC=25oC
TC=70oC
TA=25oC
TA=70oC
October 2008. Version 1.0
1
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
30
±20
11.6
9.2
50
3.1
2
80
-55~150
Unit
V
V
A
A
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
40
24
Unit
oC/W
MagnaChip Semiconductor Ltd.

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MDS1651 equivalent
Physical Dimensions
8 Leads SOIC
Dimensions are in millimeters unless otherwise specified
October 2008. Version 1.0
5 MagnaChip Semiconductor Ltd.


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