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PDF MDU2511S Data sheet ( Hoja de datos )
| Número de pieza | MDU2511S | |
| Descripción | N-Channel Trench MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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MDU2511S
Single N-channel Trench MOSFET 30V, 188A, 1.7mΩ
General Description
The MDU2511S uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU2511S is suitable device for DC/DC
Converter and general purpose applications.
Features
à VDS = 30V
à ID = 188A @VGS = 10V
à RDS(ON)
< 1.7 mΩ @VGS = 10V
< 2.1 mΩ @VGS = 4.5V
à 100% UIL Tested
à 100% Rg Tested
à SBD Built In
D D DD
D D DD
D
S S SG
GS SS
PDFN56
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25oC
TC=100oC
TA=25oC
TA=70oC
TC=25oC
TC=100oC
TA=25oC
TA=70oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Aug. 2012. Ver. 1.0
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
30
±20
188.0
118.9
45.0(3)
36.0(3)
300
96.2
38.5
5.6(3)
3.6(3)
320.0
-55~150
Unit
V
V
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
22.7
1.3
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 page  
Package Dimension
PDFN56 (5x6mm)
Dimensions are in millimeters, unless otherwise specified
Dimension
A
b
C
D1
D2
E
E1
E2
e
H
K
L
α
MILLIMETERS
Min Max
0.90 1.10
0.33 0.51
0.20 0.34
4.50 5.10
- 4.22
5.90 6.30
5.50 6.10
- 4.30
1.27BSC
0.41 0.71
0.20 -
0.51 0.71
0° 12°
Aug. 2012. Ver. 1.0
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDU2511S.PDF ] | |
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