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What is MT3245A?

This electronic component, produced by the manufacturer "MOS-TECH", performs the same function as "N-Channel Power MOSFET / Transistor".


MT3245A Datasheet PDF - MOS-TECH

Part Number MT3245A
Description N-Channel Power MOSFET / Transistor
Manufacturers MOS-TECH　
Logo MOS-TECH Logo　


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MOS-TECH Semiconductor Co.,LTD
07$
N-Channel PowerTrench® MOSFET
4V, 1A, 3.0mΩ
Features
„ Typ rDS(on) = 2.3mΩ at VGS = 10V, ID = 80A
„ Typ Qg(10) = 142nC at VGS = 10V
„ Low Miller Charge
„ Low Qrr Body Diode
„ UIS Capability (Single Pulse and Repetitive Pulse)
„ RoHS Compliant
Applications
„ Power Tools
„ Automotive Engine Control
„ Powertrain Management
„ Solenoid and Motor Drivers
„ Electronic Steering
„ Integrated Starter / Alternator
„ Distributed Power Architecture and VRMs
„ Primary Switch for 12V Systems
GDS
TO-220

©2010 MOS-TECH Semiconductor Corporation
1
www.mtsemi.com

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MT3245A equivalent
Typical Characteristics
1000
100
10us
100us
10
LIMITED
BY PACKAGE
1ms
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
10ms
DC
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 5. Forward Bias Safe Operating Area
500
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.01
0.1 1 10 100 1000 5000
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
160
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
120 VDD = 5V
TJ = 175oC
80
TJ = 25oC
40 TJ = -55oC
0
2.0 2.5 3.0 3.5 4.0 4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
5.0
200
VGS = 10V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
160
VGS = 5V
120 VGS = 4.5V
80
40
VGS = 4V
0
01234
VDS, DRAIN TO SOURCE VOLTAGE (V)
5
Figure 8. Saturation Characteristics
80
ID = 80A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
60
TJ = 25oC
40 TJ = 175oC
20
0
3 4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
2.0
PULSE DURATION = 80μs
1.8 DUTY CYCLE = 0.5% MAX
1.6
1.4
1.2
1.0
0.8
0.6
-80
ID = 80A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
5 www.mtsemi.com


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
MT3245The function is N-Channel Power MOSFET / Transistor. MT SemiconductorMT Semiconductor
MT3245AThe function is N-Channel Power MOSFET / Transistor. MOS-TECHMOS-TECH

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