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YMP120N06 Datasheet PDF


N-Channel Enhancement Mode Power MOSFET - YM

Part Number YMP120N06
Description N-Channel Enhancement Mode Power MOSFET
Manufacturers YM 
Logo YM Logo 
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YMP120N06 datasheet
---------------------------------------------
YMP120N06 pdf, equivalent, schematic
Table 2. Thermal Characteristic
Parameter
Thermal ResistanceJunction-to-CaseNote2)
Symbol
RthJC
YMP120N06
Value
0.74
Unit
/W
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Gate-Body Leakage Current
BVDSS
IDSS
IDSS
VGS=0V ID=250μA
VDS=55V,VGS=0V
VGS=±20V,VDS=0V
60
10
±100
V
μA
μA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2-
4V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=40A
8 mΩ
Dynamic Characteristics
Forward Transconductance
gFS
VDS=25V,ID=40A
43
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
3101
749
197
PF
PF
PF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=44V,ID=40A,
Qgs VGS=10V
Qgd
118 nC
24 nC
48 nC
Switching times
Turn-on Delay Time
Turn-on Rise Time
td(on)
tr
VDD=28V,ID=40A,RG=25 Ω
17
122
nS
nS
Turn-Off Delay Time
Turn-Off Fall Time
td(off)
tf
VDD=28V,ID=40A,RG=2
57
72
nS
nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Forward on voltage(Note 3)
Reverse Recovery Time(Note 1)
Reverse Recovery Charge
ISD
VSD Tj=25,ISD=40A,VGS=0V
trr Tj=25,IF=40A,di/dt=100A/μs
Qrr
425
4.31
40
1.3
A
V
nS
nC
Forward Turn-on Time
ton Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 3.Pulse Test: Pulse Width 300μs, Duty Cycle 2%, R G =25 Ω, Starting Tj=25
2/7
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Part NumberDescriptionManufacturers
YMP120N06The function of this parts is a N-Channel Enhancement Mode Power MOSFET.YM
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