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SM7320ESQG PDF Datasheet - Dual N-Channel Enhancement Mode MOSFET - Sinopower

Part Number SM7320ESQG
Description Dual N-Channel Enhancement Mode MOSFET
Manufacturers Sinopower 
Logo Sinopower Logo 
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SM7320ESQG datasheet, circuit
SM7320ESQG
®
Dual N-Channel Enhancement Mode MOSFET
Features
Channel 1
30V/64A,
R
DS(ON)
=
5.2m
(max.)
@
V
GS
=
10V
RDS(ON) = 7.5m(max.) @ VGS = 4.5V
Channel 2
30V/85A,
RDS(ON) = 1.8m(max.) @ VGS =10V
R
DS(ON)
=
2.5m
(max.)
@
V
GS
=4.5V
100% UIS Tested
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Applications
Pin Description
G2S2S2S2
D1
D1
G1D1
S1/D2
D1
DUAL DFN5x6-8
Pin1
D1
(2) (3) (4)
G1 (1)
S1/D2
G2
(8)
Power Management in Desktop Computer or
DC/DC Converters.
Ordering and Marking Information
S2 (5)(6)(7)
N-Channel MOSFET
SM7320ES
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
QG : DFN5x6-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM7320ES QG :
SM7320
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - August, 2014
1
www.sinopowersemi.com

1 page

SM7320ESQG pdf, schematic
SM7320ESQG
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Channel 1 Channel 2 Unit
Common Ratings
VDSS Drain-Source Voltage
30 V
VGSS Gate-Source Voltage
±20 V
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
150
-55 to 150
°C
°C
IS Diode Continuous Forward Current
ID
b
P
Pulse Drain Current Tested
30 75 A
200 300 A
ID a Continuous Drain Current
TC=25°C
TC=100°C
64
40
85
A
80
PD Maximum Power Dissipation
TC=25°C
TC=100°C
35
14
83
W
33
RθJC Thermal Resistance-Junction to Case
Steady State
3.5
1.5 °C/W
ID Continuous Drain Current
TA=25°C
TA=70°C
16 30
A
13 24
PD Maximum Power Dissipation
TA=25°C
TA=70°C
2.08 2.38
W
1.33 1.52
t 10s
RθJA Thermal Resistance-Junction to Ambient
Steady State
30
60
28
°C/W
52.5
IAS c Avalanche Current, Single pulse (L=0.1mH)
30 50 A
EAS c Avalanche Energy, Single pulse (L=0.1mH)
45 125 mJ
Note aPackage is limited to 85A.
Note bPulse width is limited by max. junction temperature.
Note cUIS tested and pulse width are limited by maximum junction temperature 150oC(initial temperature Tj=25oC).
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - August, 2014
2
www.sinopowersemi.com

2 Page

SM7320ESQG equivalent
SM7320ESQG
Channel 1 Typical Operating Characteristics
®
Power Dissipation
40
35
30
25
20
15
10
5
T =25oC
C
0
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Drain Current
70
60
50
40
30
20
10
T =25oC,V =10V
0C
G
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
500
100
100µs
10 1ms
10ms
1 DC
T =25oC
0.1 C
0.01 0.1 1 10 100 300
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
4
1 Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
1E-3
Single Pulse
1E-4
1E-6 1E-5 1E-4
R :3.5oC/W
θJC
1E-3 0.01 0.1
Square Wave Pulse Duration (sec)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - August, 2014
5
www.sinopowersemi.com

5 Page

SM7320ESQG diode, scr
SM7320ESQG
®
Channel 2 Typical Operating Characteristics (Cont.)
Output Characteristics
160
V =3.5,4,5,6,7,8,9,10V
GS
140
120
100
80 3V
60
40
20
2.5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
3.5
3.0
2.5
V =4.5V
2.0 GS
V =10V
GS
1.5
1.0
0.5
0.0
0
30 60 90 120 150
ID- Drain Current (A)
Gate-Source On Resistance
12
I =30A
DS
10
8
6
4
2
0
2 3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
I
DS
=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - August, 2014
9
www.sinopowersemi.com

9 Page





Information Total 15 Pages
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SM7320ESQGThe function of this parts is a Dual N-Channel Enhancement Mode MOSFET.Sinopower
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