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SM7321ESKP PDF Datasheet - Dual N-Channel Enhancement Mode MOSFET - Sinopower

Part Number SM7321ESKP
Description Dual N-Channel Enhancement Mode MOSFET
Manufacturers Sinopower 
Logo Sinopower Logo 
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SM7321ESKP datasheet, circuit
SM7321ESKP
®
Dual N-Channel Enhancement Mode MOSFET
Features
· Channel 1
30V/48A,
RDS(ON) = 7mW (max.) @ VGS = 10V
RDS(ON) = 10mW (max.) @ VGS = 4.5V
· Channel 2 (Integrated Schottky Diode)
30V/50A,
RDS(ON) = 2.9mW (max.) @ VGS =10V
RDS(ON) = 3.75mW (max.) @ VGS =4.5V
· 100% UIS Tested
· Reliable and Rugged
· Lead Free Available (RoHS Compliant)
Applications
Pin Description
G2S2 S2S2
G1D1D1D1
S1/D2
D1
DUAL DFN5x6-8
Pin1
D1
(2) (3) (4)
S1/D2
G1 (1)
G2
(8)
· Power Management in Desktop Computer or
DC/DC Converters.
S2 (5)(6)(7)
N-Channel MOSFET
Ordering and Marking Information
SM7321ES
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
KP : DFN5x6-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM7321ES KP :
SM7321
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - November, 2013
1
www.sinopowersemi.com

1 page

SM7321ESKP pdf, schematic
SM7321ESKP
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Channel 1 Channel 2 Unit
Common Ratings
VDSS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
ID a Continuous Drain Current
IDMb Pulse Drain Cureent
TC=25°C
TC=100°C
TC=25°C
30
±20
150
-55 to 150
18 30
54 80a
34 66
125 200
V
°C
A
PD Maximum Power Dissipation
TC=25°C
TC=100°C
RqJC Thermal Resistance-Junction to Case
Steady State
ID Continuous Drain Current
TA=25°C
TA=100°C
PD Maximum Power Dissipation
TA=25°C
TA=100°C
Rq JA
Thermal Resistance-Junction to Ambient
t £ 10s
Steady State
31
12.4
4
12
9.7
1.6
1
40
80
50
W
20
2.5 °C/W
24
A
19
2.7
A
1.7
20
°C/W
45
IAS b Avalanche Current, Single pulse
L=0.1mH
L=0.5mH
27
14
45
A
27
EAS b Avalanche Energy, Single pulse
L=0.1mH 35 101
mJ
L=0.5mH 49 180
Note aCurrent limited to 80A.
Note bPulse width is limited by maximum junction temperature.
Note cUIS tested and pulse width are limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - November, 2013
2
www.sinopowersemi.com

2 Page

SM7321ESKP equivalent
SM7321ESKP
®
Channel 1 Typical Operating Characteristics
Power Dissipation
35
30
25
20
15
10
5
T =25oC
0C
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Drain Current
60
50
40
30
20
10
0 TC=25oC,VG=10V
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
500
100
100ms
10
1ms
10ms
1 DC
0.1 TC=25oC
0.01 0.1 1 10 100 300
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
4
1 Duty = 0.5
0.2
0.1
0.1 0.05
0.01
0.02
0.01
1E-3
Single Pulse
R :4oC/W
1E-4
qJC
1E-6 1E-5 1E-4 1E-3 0.01 0.1 1
Square Wave Pulse Duration (sec)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - November, 2013
5
www.sinopowersemi.com

5 Page

SM7321ESKP diode, scr
SM7321ESKP
®
Channel 2 Typical Operating Characteristics
Power Dissipation
60
50
40
30
20
10
T =25oC
0C
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Drain Current
100
80
60
40
20
T =25oC,V =10V
0C
G
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
500
100
100ms
10
1ms
DC
1
0.1 TC=25oC
0.01 0.1 1 10 100 300
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
4
1 Duty = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
1E-3 Single Pulse
1E-4
1E-6
1E-5
1E-4
RqJC :2.5oC/W
1E-3 0.01 0.1
Square Wave Pulse Duration (sec)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - November, 2013
9
www.sinopowersemi.com

9 Page





Information Total 17 Pages
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