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SM7303ESKP PDF Datasheet - Dual N-Channel Enhancement Mode MOSFET - Sinopower

Part Number SM7303ESKP
Description Dual N-Channel Enhancement Mode MOSFET
Manufacturers Sinopower 
Logo Sinopower Logo 
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SM7303ESKP datasheet, circuit
SM7303ESKP
®
Dual N-Channel Enhancement Mode MOSFET
Features
· Channel 1
30V/48A,
RDS(ON) = 7mW (max.) @ VGS = 10V
RDS(ON) = 10mW (max.) @ VGS = 4.5V
· Channel 2 (Integrated Schottky Diode)
30V/50A,
RDS(ON) = 5mW (max.) @ VGS =10V
RDS(ON) = 6.5mW (max.) @ VGS =4.5V
· 100% UIS Tested
· Reliable and Rugged
· Lead Free Available (RoHS Compliant)
Applications
Pin Description
G2S2 S2S2
G1D1D1D1
S1/D2
D1
DUAL DFN5x6-8
Pin1
D1
(2) (3) (4)
S1/D2
G1 (1)
G2
(8)
· Power Management in Desktop Computer or
DC/DC Converters.
Ordering and Marking Information
S2 (5)(6)(7)
N-Channel MOSFET
SM7303ES
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
KP : DFN5x6-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM7303ES KP :
SM7303
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - January, 2014
1
www.sinopowersemi.com

1 page

SM7303ESKP pdf, schematic
SM7303ESKP
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Channel 1 Channel 2 Unit
Common Ratings
VD SS
VGSS
TJ
TSTG
IS
ID M b
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Pulse Drain Current Tested
ID a Continuous Drain Current
TC=25°C
TC=25°C
TC=100°C
30
±20
150
-55 to 150
5 20
120 150
48 50
30 31.6
V
°C
A
PD
Rq JC
ID
PD
Rq JA
IAS b
IAS b
EAS c
EAS c
Maximum Power Dissipation
Thermal Resistance-Junction to Case
TC=25°C
TC=100°C
Steady State
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
TA=25°C
TA=70°C
TA=25°C
TA=70°C
t £ 10s
Steady State
Avalanche Current, Single pulse (L=0.1mH)
Avalanche Current, Single pulse (L=0.5mH)
Avalanche Energy, Single pulse (L=0.1mH)
Avalanche Energy, Single pulse (L=0.5mH)
25
10
5
12
9.5
1.6
1
40
80
27
14
35
50
35
W
14
3.5 °C/W
16
A
12
1.9
W
1.1
35
°C/W
65
30
A
15
45
mJ
56
Note aPackage is limited to 50A.
bPulse width limited by max. junction temperature.
cUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - January, 2014
2
www.sinopowersemi.com

2 Page

SM7303ESKP equivalent
SM7303ESKP
®
Channel 1 Typical Operating Characteristics
Power Dissipation
30
25
20
15
10
5
T =25oC
0C
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Drain Current
60
50
40
30
20
10
T =25oC,V =10V
0C
G
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
400
100
1ms
10 10ms
100ms
1s
1 DC
0.1 TC=25OC
0.01 0.1 1 10 100
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
2
1 Duty = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
0.01 Single Pulse
1E-3
1E-4 1E-3 0.01
Mounted on 1in2 pad
RqJA :40oC/W
0.1 1 10 100
Square Wave Pulse Duration (sec)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - January, 2014
5
www.sinopowersemi.com

5 Page

SM7303ESKP diode, scr
SM7303ESKP
®
Channel 2 Typical Operating Characteristics
Power Dissipation
40
35
30
25
20
15
10
5
0 TC=25oC
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Drain Current
60
50
40
30
20
10
0 TC=25oC,VG=10V
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
400
100
10ms
10 100ms
1s
1 DC
0.1 TC=25oC
0.01 0.1
1
10 100 300
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
3
1 Duty = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
1E-3
Single Pulse
1E-4
1E-4 1E-3 0.01
Mounted on 1in2 pad
R :35oC/W
qJA
0.1 1 10 100
Square Wave Pulse Duration (sec)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - January, 2014
9
www.sinopowersemi.com

9 Page





Information Total 17 Pages
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