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SM7303ESKP Datasheet PDF


Dual N-Channel Enhancement Mode MOSFET - Sinopower

Part Number SM7303ESKP
Description Dual N-Channel Enhancement Mode MOSFET
Manufacturers Sinopower 
Logo Sinopower Logo 
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SM7303ESKP datasheet
---------------------------------------------
SM7303ESKP pdf, equivalent, schematic
SM7303ESKP
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Channel 1 Channel 2 Unit
Common Ratings
VD SS
VGSS
TJ
TSTG
IS
ID M b
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Pulse Drain Current Tested
ID a Continuous Drain Current
TC=25°C
TC=25°C
TC=100°C
30
±20
150
-55 to 150
5 20
120 150
48 50
30 31.6
V
°C
A
PD
Rq JC
ID
PD
Rq JA
IAS b
IAS b
EAS c
EAS c
Maximum Power Dissipation
Thermal Resistance-Junction to Case
TC=25°C
TC=100°C
Steady State
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
TA=25°C
TA=70°C
TA=25°C
TA=70°C
t £ 10s
Steady State
Avalanche Current, Single pulse (L=0.1mH)
Avalanche Current, Single pulse (L=0.5mH)
Avalanche Energy, Single pulse (L=0.1mH)
Avalanche Energy, Single pulse (L=0.5mH)
25
10
5
12
9.5
1.6
1
40
80
27
14
35
50
35
W
14
3.5 °C/W
16
A
12
1.9
W
1.1
35
°C/W
65
30
A
15
45
mJ
56
Note aPackage is limited to 50A.
bPulse width limited by max. junction temperature.
cUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - January, 2014
2
www.sinopowersemi.com
---------------------------------------------
SM7303ESKP transistor, diode fet, igbt, scr
SM7303ESKP
®
Channel 2 Typical Operating Characteristics
Power Dissipation
40
35
30
25
20
15
10
5
0 TC=25oC
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Drain Current
60
50
40
30
20
10
0 TC=25oC,VG=10V
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
400
100
10ms
10 100ms
1s
1 DC
0.1 TC=25oC
0.01 0.1
1
10 100 300
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
3
1 Duty = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
1E-3
Single Pulse
1E-4
1E-4 1E-3 0.01
Mounted on 1in2 pad
R :35oC/W
qJA
0.1 1 10 100
Square Wave Pulse Duration (sec)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - January, 2014
9
www.sinopowersemi.com





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Part NumberDescriptionManufacturers
SM7303ESKPThe function of this parts is a Dual N-Channel Enhancement Mode MOSFET.Sinopower
Sinopower

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