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PDF SM7506NSW Data sheet ( Hoja de datos )
| Número de pieza | SM7506NSW | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Sinopower | |
| Logotipo |  |
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SM7506NSW
®
N-Channel Enhancement Mode MOSFET
Features
· 75V/170A**,
RDS(ON)= 4.3mW(max.) @ VGS= 10V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
S
D
G
Top View of TO-247
D
Applications
· Synchronous Rectification.
· Power Management in Inverter Systems.
G
S
N-Channel MOSFET
Ordering and Marking Information
SM7506NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
W : TO-247
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube (30ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM7506NS W :
SM7506N
XXXXX
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - January, 2014
1
www.sinopowersemi.com
1 page  
SM7506NSW
®
Typical Operating Characteristics (Cont.)
Output Characteristics
200
180 VGS= 5.5,6,7,8,9,10V
160
140
5V
120
100
80
60
4.5V
40
20
4V
0
012345
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
4.4
4.2
4.0
3.8
3.6 VGS=10V
3.4
3.2
3.0
2.8
2.6
0
20 40 60 80 100 120
ID- Drain Current (A)
Gate-Source On Resistance
18
I =40A
DS
15
12
9
6
3
0
3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS =250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - January, 2014
5
www.sinopowersemi.com
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SM7506NSW.PDF ] | |
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