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SM8A01NSW Datasheet PDF


N-Channel Enhancement Mode MOSFET - Sinopower

Part Number SM8A01NSW
Description N-Channel Enhancement Mode MOSFET
Manufacturers Sinopower 
Logo Sinopower Logo 
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SM8A01NSW datasheet
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SM8A01NSW pdf, equivalent, schematic
SM8A01NSW
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VD S S
VGSS
TJ
TSTG
IS
IDP
ID
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
300μs Pulse Drain Current Tested
Continuous Drain Current
TC=25°C
TC=25°C
TC=100°C
PD Maximum Power Dissipation
TC=25°C
TC=100°C
RqJC Thermal Resistance-Junction to Case
RqJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
dv/dt b MOSFET dv/dt ruggedness
EAS c Avalanche Energy, Single Pulsed
IAR d Avalanche Current
EAR d Repetitive Avalanche Energy
Note alimited by maximum junction temperature.
Note bVDS=640V, ID=13A.
Note cID=2.5A, VDD=50V, Tj=25°C.
Note dRepetitive Rating : Pulse width limited by maximum junction temperature.
®
Rating
800
±30
150
-55 to 150
13 a
40a
13 a
9a
208
83
0.6
62.5
50
250
2.5
0.6
Unit
V
°C
A
W
°C/W
V/ns
mJ
A
mJ
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - May, 2014
2
www.sinopowersemi.com
---------------------------------------------
SM8A01NSW transistor, diode fet, igbt, scr
SM8A01NSW
Classification Profile
®
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - May, 2014
9
www.sinopowersemi.com





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