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SM8A01NSW PDF Datasheet - N-Channel Enhancement Mode MOSFET - Sinopower

Part Number SM8A01NSW
Description N-Channel Enhancement Mode MOSFET
Manufacturers Sinopower 
Logo Sinopower Logo 
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SM8A01NSW datasheet, circuit
SM8A01NSW
®
N-Channel Enhancement Mode MOSFET
Features
Pin Description
· 800V/13A,
RDS(ON)= 0.38W(max.) @ VGS= 10V
V @Tj, max=930 (typ.)
DS
· Reliable and Rugged
· Avalanche Rated
· Lead Free and Green Devices Available
(RoHS Compliant)
DS
G
Top View of TO-247
D
Applications
· AC/DC Power Conversion in Switched Mode Power
Supplies (SMPS).
· Uninterruptible Power Supply (UPS),
· Adapter.
G
S
N-Channel MOSFET
Ordering and Marking Information
SM8A01NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
W : TO-247
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube (30ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM8A01NS W :
SM8A01N
XXXXX
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - May, 2014
1
www.sinopowersemi.com

1 page

SM8A01NSW pdf, schematic
SM8A01NSW
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VD S S
VGSS
TJ
TSTG
IS
IDP
ID
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
300μs Pulse Drain Current Tested
Continuous Drain Current
TC=25°C
TC=25°C
TC=100°C
PD Maximum Power Dissipation
TC=25°C
TC=100°C
RqJC Thermal Resistance-Junction to Case
RqJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
dv/dt b MOSFET dv/dt ruggedness
EAS c Avalanche Energy, Single Pulsed
IAR d Avalanche Current
EAR d Repetitive Avalanche Energy
Note alimited by maximum junction temperature.
Note bVDS=640V, ID=13A.
Note cID=2.5A, VDD=50V, Tj=25°C.
Note dRepetitive Rating : Pulse width limited by maximum junction temperature.
®
Rating
800
±30
150
-55 to 150
13 a
40a
13 a
9a
208
83
0.6
62.5
50
250
2.5
0.6
Unit
V
°C
A
W
°C/W
V/ns
mJ
A
mJ
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - May, 2014
2
www.sinopowersemi.com

2 Page

SM8A01NSW equivalent
SM8A01NSW
®
Typical Operating Characteristics (Cont.)
Output Characteristics
40
VGS=8V,10,15V
30
7V
20
6V
10
Transfer Characteristics
100
10
Tj=150oC
1
Tj=25oC
Tj=-55oC
0
0 5 10 15 20 25 30
VDS - Drain - Source Voltage (V)
0.1
2
3456789
VGS - Gate-Source Voltage (V)
10
Drain-Source On Resistance
0.8
0.7
0.6
0.5
VGS=10V
0.4
0.3
0.2
0.1
0.0
0
5 10 15 20 25 30
ID- Drain Current (A)
Drain-Source On Resistance
3.0
VGS = 10V
2.5 IDS = 8A
2.0
1.5
1.0
0.5
0.0 RON@Tj=25oC: 0.33W
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - May, 2014
5
www.sinopowersemi.com

5 Page

SM8A01NSW diode, scr
SM8A01NSW
Classification Profile
®
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - May, 2014
9
www.sinopowersemi.com

9 Page





Information Total 10 Pages
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