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PDF SM8A01NSW Data sheet ( Hoja de datos )

Número de pieza SM8A01NSW
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes Sinopower 
Logotipo Sinopower Logotipo



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No Preview Available ! SM8A01NSW Hoja de datos, Descripción, Manual

SM8A01NSW
®
N-Channel Enhancement Mode MOSFET
Features
Pin Description
· 800V/13A,
RDS(ON)= 0.38W(max.) @ VGS= 10V
V @Tj, max=930 (typ.)
DS
· Reliable and Rugged
· Avalanche Rated
· Lead Free and Green Devices Available
(RoHS Compliant)
DS
G
Top View of TO-247
D
Applications
· AC/DC Power Conversion in Switched Mode Power
Supplies (SMPS).
· Uninterruptible Power Supply (UPS),
· Adapter.
G
S
N-Channel MOSFET
Ordering and Marking Information
SM8A01NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
W : TO-247
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube (30ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM8A01NS W :
SM8A01N
XXXXX
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - May, 2014
1
www.sinopowersemi.com

1 page




SM8A01NSW pdf
SM8A01NSW
®
Typical Operating Characteristics (Cont.)
Output Characteristics
40
VGS=8V,10,15V
30
7V
20
6V
10
Transfer Characteristics
100
10
Tj=150oC
1
Tj=25oC
Tj=-55oC
0
0 5 10 15 20 25 30
VDS - Drain - Source Voltage (V)
0.1
2
3456789
VGS - Gate-Source Voltage (V)
10
Drain-Source On Resistance
0.8
0.7
0.6
0.5
VGS=10V
0.4
0.3
0.2
0.1
0.0
0
5 10 15 20 25 30
ID- Drain Current (A)
Drain-Source On Resistance
3.0
VGS = 10V
2.5 IDS = 8A
2.0
1.5
1.0
0.5
0.0 RON@Tj=25oC: 0.33W
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - May, 2014
5
www.sinopowersemi.com

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