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SM7575NSFH PDF Datasheet - N-Channel Enhancement Mode MOSFET - Sinopower

Part Number SM7575NSFH
Description N-Channel Enhancement Mode MOSFET
Manufacturers Sinopower 
Logo Sinopower Logo 
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SM7575NSFH datasheet, circuit
SM7575NSFH
®
N-Channel Enhancement Mode MOSFET
Features
· 75V/100A,
RDS(ON)= 7.2mW (Max.) @ VGS=10V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Applications
· Power Management for Inverter Systems.
.
Pin Description
GDS
Top View of TO-220H
D
G
S
N-Channel MOSFET
Ordering and Marking Information
SM7575NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
FH : TO-220H
Operating Junction Temperature Range
C : -55 to 175 oC
Handling Code
TU : Tube (50ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM7575NS FH : SM7575N
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - April, 2014
1
www.sinopowersemi.com

1 page

SM7575NSFH pdf, schematic
SM7575NSFH
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
75
V
±25
TJ
TST G
Maximum Junction Temperature
Storage Temperature Range
150
-55 to 150
°C
IS Diode Continuous Forward Current
TC=25°C
50
ID Continuous Drain Current
TC=25°C
TC=100°C
100
A
63
IDM Pulsed Drain Current
TC=25°C
400 a
PD Maximum Power Dissipation
TC=25°C
TC=100°C
131
W
52
RqJC Thermal Resistance-Junction to Case
Steady State
0.95 °C/W
ID Continuous Drain Current
TA=25°C
TA=70°C
12.5
A
10
PD Maximum Power Dissipation
TA=25°C
TA=70°C
2
W
1.25
RqJA Thermal Resistance-Junction to Ambient
IAS b Avalanche Current, Single pulse
Steady State
L=0.5mH
62.5 °C/W
30 A
EAS b Avalanche Energy, Single pulse
L=0.5mH
225 mJ
Note aPulse width limited by max. junction temperature.
Note bUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - April, 2014
2
www.sinopowersemi.com

2 Page

SM7575NSFH equivalent
SM7575NSFH
Typical Operating Characteristics (Cont.)
®
Output Characteristics
180
VGS=6,7,8,9,10V
150
5.5V
120
90 5V
60
30 4.5V
0 4V
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
12
10
8
VGS=10V
6
4
2
0
0 40 80 120 160 200
ID- Drain Current (A)
Gate-Source On Resistance
30
IDS=40A
25
20
15
10
5
0
3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS =250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - April, 2014
5
www.sinopowersemi.com

5 Page

SM7575NSFH diode, scr
SM7575NSFH
Classification Profile
®
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - April, 2014
9
www.sinopowersemi.com

9 Page





Information Total 10 Pages
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