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SM7580NSFH PDF Datasheet - N-Channel Enhancement Mode MOSFET - Sinopower

Part Number SM7580NSFH
Description N-Channel Enhancement Mode MOSFET
Manufacturers Sinopower 
Logo Sinopower Logo 
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SM7580NSFH datasheet, circuit
SM7580NSFH
Features
· 80V/83A,
RDS(ON)=9.6mW (max.) @ VGS=10V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
GDS
Top View of TO-220H
D
Applications
· Switching Application
G
S
N-Channel MOSFET
Ordering and Marking Information
SM7580NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
FH : TO-220H
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube (50ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM7580NS FH : SM7580N
XXXXX
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
1
www.sinopowersemi.com

1 page

SM7580NSFH pdf, schematic
SM7580NSFH
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Common Ratings
VDSS
VGSS
TJ
TSTG
IS
IDP
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RqJC Thermal Resistance-Junction to Case
RqJA Thermal Resistance-Junction to Ambient
EAS Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
L=2mH
Rating
80
±25
150
-55 to 150
83
200
83
52
113
45
1.1
62.5
460
Unit
V
°C
A
W
°C/W
mJ
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions Min.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS=0V, IDS=250mA
ΔBVDSS/ΔTJ Breakdown Voltage Temp. Coefficient VGS=0V, IDS=250mA
IDSS Zero Gate Voltage Drain Current
VDS=60V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250mA
IGSS Gate Leakage Current
VGS=±25V, VDS=0V
RDS(ON) a Drain-Source On-state Resistance VGS=10V, IDS=40A
Diode Characteristics
80
-
-
-
2
-
-
VSDa
tr r
Qr r
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=20A, VGS=0V
ISD=40A,
dlSD/dt=100A/ms
-
-
-
Typ.
-
0.073
-
-
3
-
8
0.8
41
71
Max.
-
-
1
30
4
±100
9.6
1.3
-
-
Unit
V
V/°C
mA
V
nA
mW
V
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
2
www.sinopowersemi.com

2 Page

SM7580NSFH equivalent
SM7580NSFH
Typical Operating Characteristics (Cont.)
®
Output Characteristics
200
VGS=7,8,9,10V
175
6V
150
125
5.5V
100
75
5V
50
25 4.5V
4V
0
012345
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
12
11
10
9
VGS=10V
8
7
6
5
4
0 20 40 60 80 100
ID- Drain Current (A)
Gate-Source On Resistance
28
IDS=40A
24
20
16
12
8
4
4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS =250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
5
www.sinopowersemi.com

5 Page

SM7580NSFH diode, scr
SM7580NSFH
Classification Profile
®
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
9
www.sinopowersemi.com

9 Page





Information Total 10 Pages
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