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PDF SM7580NSFH Data sheet ( Hoja de datos )

Número de pieza SM7580NSFH
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes Sinopower 
Logotipo Sinopower Logotipo



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No Preview Available ! SM7580NSFH Hoja de datos, Descripción, Manual

SM7580NSFH
Features
· 80V/83A,
RDS(ON)=9.6mW (max.) @ VGS=10V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
GDS
Top View of TO-220H
D
Applications
· Switching Application
G
S
N-Channel MOSFET
Ordering and Marking Information
SM7580NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
FH : TO-220H
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube (50ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM7580NS FH : SM7580N
XXXXX
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
1
www.sinopowersemi.com

1 page




SM7580NSFH pdf
SM7580NSFH
Typical Operating Characteristics (Cont.)
®
Output Characteristics
200
VGS=7,8,9,10V
175
6V
150
125
5.5V
100
75
5V
50
25 4.5V
4V
0
012345
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
12
11
10
9
VGS=10V
8
7
6
5
4
0 20 40 60 80 100
ID- Drain Current (A)
Gate-Source On Resistance
28
IDS=40A
24
20
16
12
8
4
4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS =250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
5
www.sinopowersemi.com

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