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PDF SM7003NSFH Data sheet ( Hoja de datos )

Número de pieza SM7003NSFH
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes Sinopower 
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No Preview Available ! SM7003NSFH Hoja de datos, Descripción, Manual

SM7003NSFH
®
N-Channel Enhancement Mode MOSFET
Features
· 68V/80A,
RDS(ON)=7.2mW (max.) @ VGS=10V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
GDS
Top View of TO-220H
Applications
D
· Synchronous Rectification.
· Power Management in Inverter Systems.
G
Ordering and Marking Information
S
N-Channel MOSFET
SM7003NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
FH : TO-220H
Operating Junction Temperature Range
C : -55 to 175 oC
Handling Code
TU : Tube (50ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM7003NS FH : SM7003N
XXXXX
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
1
www.sinopowersemi.com

1 page




SM7003NSFH pdf
SM7003NSFH
®
Typical Operating Characteristics (Cont.)
Output Characteristics
200
175 VGS=6,7,8,9,10V
150 5.5V
125
100
75 5V
50
25 4.5V
4V
0
012345
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
10
9
8
7 V =10V
GS
6
5
4
3
0 40 80 120 160 200
ID- Drain Current (A)
Gate-Source On Resistance
21
IDS=40A
18
15
12
9
6
3
0
3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS =250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
5
www.sinopowersemi.com

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