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SM7501NSFH PDF Datasheet - N-Channel Enhancement Mode MOSFET - Sinopower

Part Number SM7501NSFH
Description N-Channel Enhancement Mode MOSFET
Manufacturers Sinopower 
Logo Sinopower Logo 
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SM7501NSFH datasheet, circuit
SM7501NSFH
Features
· 75V/80A,
RDS(ON)=11mW (max.) @ VGS=10V
· Avalanche Rated
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
GDS
Top View of TO-220H
D
Applications
· Power Management for Inverter Systems.
G
S
N-Channel MOSFET
Ordering and Marking Information
SM7501NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
FH : TO-220H
Operating Junction Temperature Range
C : -55 to 175 oC
Handling Code
TU : Tube (50ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM7501NS FH : SM7501N
XXXXX
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
1
www.sinopowersemi.com

1 page

SM7501NSFH pdf, schematic
SM7501NSFH
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Common Ratings
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RqJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
EAS Avalanche Energy, Single Pulsed
Note *Pulse width limited by safe operating area.
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
L=2mH
Rating
75
±25
175
-55 to 175
80
300*
80
67
176
88
0.85
1
Unit
V
°C
°C
A
A
A
W
°C/W
J
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
2
www.sinopowersemi.com

2 Page

SM7501NSFH equivalent
SM7501NSFH
Typical Operating Characteristics (Cont.)
®
180
160
140
120
100
80
60
40
20
0
0
Output Characteristics
VGS= 8,9,10V
7V
6.5V
6V
5.5V
5V
4.5V
1234
5
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
13
12
11
10
VGS=10V
9
8
7
6
5
0 20 40 60 80 100
ID- Drain Current (A)
Gate-Source On Resistance
20
IDS=40A
18
16
14
12
10
8
6
5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS =250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
5
www.sinopowersemi.com

5 Page

SM7501NSFH diode, scr
SM7501NSFH
Classification Profile
®
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
9
www.sinopowersemi.com

9 Page





Information Total 10 Pages
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