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SM9993DSQG PDF Datasheet - Dual N-Channel Enhancement Mode MOSFET - Sinopower

Part Number SM9993DSQG
Description Dual N-Channel Enhancement Mode MOSFET
Manufacturers Sinopower 
Logo Sinopower Logo 
Preview
Preview ( 11 pages )
		
SM9993DSQG datasheet, circuit
SM9993DSQG
®
Dual N-Channel Enhancement Mode MOSFET
Features
20V/12A,
RDS(ON)= 7.4m(Max.) @ VGS=4.5V
R=
DS(ON)
7.6m
(Max.)
@
V =4V
GS
RDS(ON)= 8m(Max.) @ VGS=3.7V
RDS(ON)= 8.7m(Max.) @ VGS=3.1V
R=
DS(ON)
10m
(Max.)
@
V =2.5V
GS
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
ESD protection
Applications
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
One Cell Li-ion Battery Pack.
Pin Description
S2 S2G2
S1 S1G1
DFN2x3-6
DD
(3) (4)
G1 G2
S1 S1
(1) (2)
S2 S2
(5) (6)
N-Channel MOSFET
Ordering and Marking Information
SM9993DS
9993X
SM9993DS QG : XXXXX
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
QG : DFN2x3-6
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
X - Internal Code
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - September, 2014
1
www.sinopowersemi.com

1 page

SM9993DSQG pdf, schematic
SM9993DSQG
®
Absolute
Maximum
Ratings
(T
A
=
25°C
Unless
Otherwise
Noted)
Symbol
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
ID Continuous Drain Current
IDM b
IS
TJ
TST G
Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
PD Maximum Power Dissipation
RθJA a Thermal Resistance-Junction to Ambient
Note aSurface Mounted on 1in2 pad area, t 10sec.
Note bPulse width is limited by max. junction temperature.
TA=25°C
TA=70°C
TA=25°C
TA=25°C
TA=70°C
t 10s
Rating
20
±12
12
9.5
70
1
150
-55 to 150
1.56
1.0
80
Unit
V
A
A
A
°C
W
°C/W
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - September, 2014
2
www.sinopowersemi.com

2 Page

SM9993DSQG equivalent
SM9993DSQG
Typical Operating Characteristics (Cont.)
®
Output Characteristics
70
60
V =2,2.5,3,4,5,6,7,8,9,10V
GS
50
40 1.7V
30
20 1.5V
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain - Source Voltage (V)
Gate-Source On Resistance
25
I =5.5A
DS
20
15
10
5
0
1 2 3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Drain-Source On Resistance
10
9
V =2.5V
GS
8
V =3.1V
GS
7
6 V =4.5V
GS
V =4V
GS
V =3.7V
GS
5
4
0 10 20 30 40 50 60 70
ID- Drain Current (A)
Gate Threshold Voltage
1.4
IDS=250µA
1.2
1.0
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - September, 2014
5
www.sinopowersemi.com

5 Page

SM9993DSQG diode, scr
SM9993DSQG
Carrier Tape & Reel Dimensions
®
D0 P2 P0
T
E1
D1
P1
F
W
B0
A-A B-B
K0
B-B
A0
A-A
d
T1
Application A
H
178.0±2.00 50 MIN.
D FN 2x3-6
(saw type)
P0
P1
4.0±0.10 4.0±0.10
T1 C
d
8.4+2.50
-0.00
13.5±0.20
1.5 MIN.
P2 D0 D1
2.0±0.1 1.5+0.10 1.0±0.10
-0.00
D
20.2 MIN.
T
0.3±0.10
W E1
8.0±0.30 1.75±0.10
A0 B0
2.3±0.10 3.2±0.10
F
3.5±0.05
K0
1.0±0.10
(mm)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - September, 2014
9
www.sinopowersemi.com

9 Page





Information Total 11 Pages
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Part NumberDescriptionManufacturers
SM9993DSQGThe function of this parts is a Dual N-Channel Enhancement Mode MOSFET.Sinopower
Sinopower

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