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SM8003NF PDF Datasheet - N-Channel Enhancement Mode MOSFET - Sinopower

Part Number SM8003NF
Description N-Channel Enhancement Mode MOSFET
Manufacturers Sinopower 
Logo Sinopower Logo 
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SM8003NF datasheet, circuit
SM8003NF
Features
· 80V/70A,
RDS(ON)=11mW (max.) @ VGS=10V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
GDS
Top View of TO-220
D
Applications
· Synchronous Rectification.
· Power Management in Inverter Systems.
G
S
N-Channel MOSFET
Ordering and Marking Information
SM8003N
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
F : TO-220
Operating Junction Temperature Range
C : -55 to 175 oC
Handling Code
TU : Tube (50ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM8003N F :
SM8003N
XXXXX
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
1
www.sinopowersemi.com

1 page

SM8003NF pdf, schematic
SM8003NF
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RqJC Thermal Resistance-Junction to Case
RqJA Thermal Resistance-Junction to Ambient
EAS Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
L=2mH
®
Rating
80
±25
175
-55 to 175
70
280
70
50
100
50
1.5
62.5
0.8
Unit
V
°C
A
W
°C/W
J
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
SM8003NF
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS=0V, IDS=250mA
ΔBVDSS/ΔTJ Breakdown Voltage Temp. Coefficient VGS=0V, IDS=250mA
IDSS Zero Gate Voltage Drain Current
VDS=64V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250mA
IGSS Gate Leakage Current
VGS=±25V, VDS=0V
RDS(ON) a Drain-Source On-state Resistance VGS=10V, IDS=40A
Diode Characteristics
80
-
-
-
2
-
-
-
0.073
-
-
3
-
8
-
-
1
30
4
±100
11
VSDa
tr r
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=20A, VGS=0V
ISD=40A,
dlSD/dt=100A/ms
- 0.8 1.3
- 50 -
- 90 -
Unit
V
V/°C
mA
V
nA
mW
V
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
2
www.sinopowersemi.com

2 Page

SM8003NF equivalent
SM8003NF
Typical Operating Characteristics (Cont.)
®
Output Characteristics
180
160 VGS= 7,8,9,10V
140
120
100 6V
80
60 5.5V
40
20 5V
4.5V
0
012345
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
12
11
10
9 VGS=10V
8
7
6
5
4
0 30 60 90 120 150
ID- Drain Current (A)
Gate-Source On Resistance
28
IDS=40A
24
20
16
12
8
4
3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS =250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
5
www.sinopowersemi.com

5 Page

SM8003NF diode, scr
SM8003NF
Classification Profile
®
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
9
www.sinopowersemi.com

9 Page





Information Total 10 Pages
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SM8003NFThe function of this parts is a N-Channel Enhancement Mode MOSFET.Sinopower
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