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SM8007NSF Datasheet PDF


N-Channel Enhancement Mode MOSFET - Sinopower

Part Number SM8007NSF
Description N-Channel Enhancement Mode MOSFET
Manufacturers Sinopower 
Logo Sinopower Logo 
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SM8007NSF datasheet
---------------------------------------------
SM8007NSF pdf, equivalent, schematic
SM8007NSF
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
IDP 300μs Pulse Drain Current Tested
TC=25°C
ID Continuous Drain Current
TC=25°C
TC=100°C
PD Maximum Power Dissipation
TC=25°C
TC=100°C
RqJC Thermal Resistance-Junction to Case
RqJA Thermal Resistance-Junction to Ambient
EAS Avalanche Energy, Single Pulsed
L=0.1mH
®
Rating
80
±25
175
-55 to 175
66
240
66
46
100
50
1.5
62.5
100
Unit
V
°C
A
A
A
W
°C/W
mJ
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS
RDS(ON) a
Gate Leakage Current
Drain-Source On-state Resistance
Diode Characteristics
VSD a
Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
SM8007NSF
Unit
Min. Typ. Max.
VGS=0V, IDS=250mA
VDS=64V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±25V, VDS=0V
VGS=10V, IDS=33A
80
-
-
2
-
-
- -V
-1
- 30 mA
3 4V
- ±100 nA
10 12 mW
ISD=20A, VGS=0V
ISD=33A,
dlSD/dt=100A/ms
- 0.8 1.3 V
- 44 - ns
- 60 - nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
2
www.sinopowersemi.com
---------------------------------------------
SM8007NSF transistor, diode fet, igbt, scr
SM8007NSF
Classification Profile
®
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
9
www.sinopowersemi.com





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SM8007NSFThe function of this parts is a N-Channel Enhancement Mode MOSFET.Sinopower
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