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PDF SM8009NSF Data sheet ( Hoja de datos )

Número de pieza SM8009NSF
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes Sinopower 
Logotipo Sinopower Logotipo



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No Preview Available ! SM8009NSF Hoja de datos, Descripción, Manual

SM8009NSF
®
N-Channel Enhancement Mode MOSFET
Features
· 80V/130A,
RDS(ON)= 5.3mW (max.) @ VGS=10V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Pin Description
GDS
Top View of TO-220
D
· Synchronous Rectification.
· Power Management in Inverter Systems.
G
Ordering and Marking Information
S
N-Channel MOSFET
SM8009NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
F : TO-220
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube (50ea/Tube)
Assembly Material
G : Halogen and Lead Free Device
SM8009NS F : SM8009N
XXXXX
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - November, 2013
1
www.sinopowersemi.com

1 page




SM8009NSF pdf
SM8009NSF
®
Typical Operating Characteristics (Cont.)
Output Characteristics
200
Drain-Source On Resistance
7
160
VGS= 5.5,6,7,8,9,10V
120
5V
80
6
5
V =10V
GS
4
40
4.5V
4V
0
012345
VDS - Drain - Source Voltage (V)
3
2
0 40 80 120 160 200
ID- Drain Current (A)
Gate-Source On Resistance
20
IDS=40A
16
12
8
4
0
3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS =250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - November, 2013
5
www.sinopowersemi.com

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