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SM8009NSF PDF Datasheet - N-Channel Enhancement Mode MOSFET - Sinopower

Part Number SM8009NSF
Description N-Channel Enhancement Mode MOSFET
Manufacturers Sinopower 
Logo Sinopower Logo 
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SM8009NSF datasheet, circuit
SM8009NSF
®
N-Channel Enhancement Mode MOSFET
Features
· 80V/130A,
RDS(ON)= 5.3mW (max.) @ VGS=10V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Pin Description
GDS
Top View of TO-220
D
· Synchronous Rectification.
· Power Management in Inverter Systems.
G
Ordering and Marking Information
S
N-Channel MOSFET
SM8009NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
F : TO-220
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube (50ea/Tube)
Assembly Material
G : Halogen and Lead Free Device
SM8009NS F : SM8009N
XXXXX
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - November, 2013
1
www.sinopowersemi.com

1 page

SM8009NSF pdf, schematic
SM8009NSF
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDS S
Drain-Source Voltage
VG SS
Gate-Source Voltage
TJ Maximum Junction Temperature
TS TG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
IDP 300μs Pulse Drain Current Tested
TC=25°C
ID Continuous Drain Current
TC=25°C
TC=100°C
PD Maximum Power Dissipation
TC=25°C
TC=100°C
RqJC Thermal Resistance-Junction to Case
RqJA Thermal Resistance-Junction to Ambient
EAS Avalanche Energy, Single Pulsed
L=1mH
Note* Current limited by bond wire.
®
Rating
80
±25
150
-55 to 150
80
300
130*
90
192
76
0.65
62.5
1000
Unit
V
°C
A
A
A
W
°C/W
mJ
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS=0V, IDS=250mA
ΔBVDSS/ΔTJ Breakdown Voltage Temp. Coefficient VGS=0V, IDS=250mA
IDSS
Zero Gate Voltage Drain Current
VDS=64V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250mA
IGSS Gate Leakage Current
VGS=±25V, VDS=0V
RDS(ON) a Drain-Source On-state Resistance VGS=10V, IDS=40A
Diode Characteristics
VSD a
trr
Qr r
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=20A, VGS=0V
ISD=40A,
dlSD/dt=100A/ms
SM8009NSF
Min. Typ. Max.
80 -
-
- 0.073 -
--1
- - 30
234
- - ±100
- 4.4 5.3
- 0.8 1.3
- 52 -
- 102 -
Unit
V
V/°C
mA
V
nA
mW
V
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - November, 2013
2
www.sinopowersemi.com

2 Page

SM8009NSF equivalent
SM8009NSF
®
Typical Operating Characteristics (Cont.)
Output Characteristics
200
Drain-Source On Resistance
7
160
VGS= 5.5,6,7,8,9,10V
120
5V
80
6
5
V =10V
GS
4
40
4.5V
4V
0
012345
VDS - Drain - Source Voltage (V)
3
2
0 40 80 120 160 200
ID- Drain Current (A)
Gate-Source On Resistance
20
IDS=40A
16
12
8
4
0
3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS =250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - November, 2013
5
www.sinopowersemi.com

5 Page

SM8009NSF diode, scr
SM8009NSF
Classification Profile
®
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - November, 2013
9
www.sinopowersemi.com

9 Page





Information Total 10 Pages
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