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PDF SM7508NSF Data sheet ( Hoja de datos )
| Número de pieza | SM7508NSF | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Sinopower | |
| Logotipo |  |
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SM7508NSF
®
N-Channel Enhancement Mode MOSFET
Features
Pin Description
· 75V/80A,
RDS(ON)= 8.4mW (Max.) @ VGS=10V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Applications
GDS
Top View of TO-220
D
· High Efficiency Synchronous Rectification in
SMPS.
· Uninterruptible Power Supply.
· High Speed Power Switching.
· Hard Switched and High Frequency Circuits.
.
Ordering and Marking Information
G
S
N-Channel MOSFET
SM7508NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
F : TO-220
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube (50ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM7508NS F : SM7508N
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
1
www.sinopowersemi.com
1 page  
SM7508NSF
Typical Operating Characteristics (Cont.)
®
Output Characteristics
200
175
VGS=6,7,8,9,10V
150
125 5.5V
100
75
50 5V
25
4.5V
0
012345
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
11
10
9
8
VGS=10V
7
6
5
4
3
0 20 40 60 80 100 120
ID- Drain Current (A)
Gate-Source On Resistance
18
IDS=40A
16
14
12
10
8
6
4
4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS =250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
5
www.sinopowersemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SM7508NSF.PDF ] | |
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