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SM8008NSK Datasheet PDF


N-Channel Enhancement Mode MOSFET - Sinopower

Part Number SM8008NSK
Description N-Channel Enhancement Mode MOSFET
Manufacturers Sinopower 
Logo Sinopower Logo 
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SM8008NSK datasheet
---------------------------------------------
SM8008NSK pdf, equivalent, schematic
SM8008NSK
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
80
±20 V
TJ
TSTG
Maximum Junction Temperature
Storage Temperature Range
150
-55 to 150
°C
IS Diode Continuous Forward Current
TA=25°C
4A
ID Continuous Drain Current
IDM a Pulsed Drain Current
TA=25°C
TA=70°C
TA=25°C
8
6.3 A
32
PD Maximum Power Dissipation
TA=25°C
TA=70°C
3.5
W
2.2
RqJA c Thermal Resistance-Junction to Ambient
t £ 10s
Steady State
35 °C/W
70 °C/W
IAS b Avalanche Current, Single pulse (L=0.5mH)
14 A
EAS b Avalanche Energy, Single pulse (L=0.5mH)
49 mJ
Note aPulse width limited by max. junction temperature.
Note bUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note cSurface Mounted on 1in2 pad area.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - November, 2013
2
www.sinopowersemi.com
---------------------------------------------
SM8008NSK transistor, diode fet, igbt, scr
SM8008NSK
Carrier Tape & Reel Dimensions
OD0
P0 P2
P1
A
®
K0
SECTION A-A
A0
B
OD1 B
SECTION B-B
A
d
T1
Application
SOP-8
A
330.0±
2.00
P0
4.0±0.10
H T1 C d D W E1 F
50 MIN.
12.4+2.00 13.0+0.50
-0.00
-0.20
1.5 MIN.
20.2 MIN. 12.0±0.30 1.75±0.10
5.5±0.05
P1 P2 D0 D1 T
A0 B0 K0
8.0±0.10
2.0±0.05
1.5+0.10
-0.00
1.5 MIN.
0.6+0.00
-0.40
6.40±0.20 5.20±0.20 2.10±0.20
(mm)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - November, 2013
9
www.sinopowersemi.com





Information Total 11 Pages
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Part NumberDescriptionManufacturers
SM8008NSKThe function of this parts is a N-Channel Enhancement Mode MOSFET.Sinopower
Sinopower

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