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SM8008NSK PDF Datasheet - N-Channel Enhancement Mode MOSFET - Sinopower

Part Number SM8008NSK
Description N-Channel Enhancement Mode MOSFET
Manufacturers Sinopower 
Logo Sinopower Logo 
Preview
Preview ( 11 pages )
		
SM8008NSK datasheet, circuit
SM8008NSK
Features
· 80V/8A,
RDS(ON)= 29mW(max.) @ VGS= 10V
RDS(ON)= 34mW(max.) @ VGS= 4.5V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
DD DD
S
S
S
G
Top View of SOP-8
( 5,6,7,8 )
DD DD
Applications
· LCD Application System.
· LED TV Backlight Module.
(4)
G
Ordering and Marking Information
S SS
(1, 2, 3)
N-Channel MOSFET
SM8008NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM8008NS K :
8008
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - November, 2013
1
www.sinopowersemi.com

1 page

SM8008NSK pdf, schematic
SM8008NSK
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
80
±20 V
TJ
TSTG
Maximum Junction Temperature
Storage Temperature Range
150
-55 to 150
°C
IS Diode Continuous Forward Current
TA=25°C
4A
ID Continuous Drain Current
IDM a Pulsed Drain Current
TA=25°C
TA=70°C
TA=25°C
8
6.3 A
32
PD Maximum Power Dissipation
TA=25°C
TA=70°C
3.5
W
2.2
RqJA c Thermal Resistance-Junction to Ambient
t £ 10s
Steady State
35 °C/W
70 °C/W
IAS b Avalanche Current, Single pulse (L=0.5mH)
14 A
EAS b Avalanche Energy, Single pulse (L=0.5mH)
49 mJ
Note aPulse width limited by max. junction temperature.
Note bUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note cSurface Mounted on 1in2 pad area.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - November, 2013
2
www.sinopowersemi.com

2 Page

SM8008NSK equivalent
SM8008NSK
®
Typical Operating Characteristics (Cont.)
Output Characteristics
32
28 VGS=4,5,6,7,8,9,10V
24
20 3V
16
12
8
4
2.5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
40
35
30
VGS=4.5V
25
V =10V
GS
20
15
10
0 5 10 15 20 25 30
ID- Drain Current (A)
Gate-Source On Resistance
50
IDS=8A
45
40
35
30
25
20
2 3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS =250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - November, 2013
5
www.sinopowersemi.com

5 Page

SM8008NSK diode, scr
SM8008NSK
Carrier Tape & Reel Dimensions
OD0
P0 P2
P1
A
®
K0
SECTION A-A
A0
B
OD1 B
SECTION B-B
A
d
T1
Application
SOP-8
A
330.0±
2.00
P0
4.0±0.10
H T1 C d D W E1 F
50 MIN.
12.4+2.00 13.0+0.50
-0.00
-0.20
1.5 MIN.
20.2 MIN. 12.0±0.30 1.75±0.10
5.5±0.05
P1 P2 D0 D1 T
A0 B0 K0
8.0±0.10
2.0±0.05
1.5+0.10
-0.00
1.5 MIN.
0.6+0.00
-0.40
6.40±0.20 5.20±0.20 2.10±0.20
(mm)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - November, 2013
9
www.sinopowersemi.com

9 Page





Information Total 11 Pages
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