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SM9926DSK PDF Datasheet - Dual N-Channel Enhancement Mode MOSFET - Sinopower

Part Number SM9926DSK
Description Dual N-Channel Enhancement Mode MOSFET
Manufacturers Sinopower 
Logo Sinopower Logo 
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SM9926DSK datasheet, circuit
SM9926DSK
®
Dual N-Channel Enhancement Mode MOSFET
Features
Pin Description
· 20V/8A,
RDS(ON) =20mW (max.) @ VGS = 4.5V
RDS(ON) =29mW (max.) @ VGS = 2.5V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
D1 D1
D2
D2
S1
G1
S2
G2
Top View of SOP-8
Applications
(8) (7)
D1 D1
(6) (5)
D2 D2
· Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
(2) (4)
G1 G2
S1 S2
(1) (3)
N-Channel MOSFET
Ordering and Marking Information
SM9926DS
SM9926DS K :
Assembly Material
Handling Code
Temperature Range
Package Code
9926
XXXXX
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500pcs/reel)
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - April, 2014
1
www.sinopowersemi.com

1 page

SM9926DSK pdf, schematic
SM9926DSK
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VD S S
VGSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
ID* Continuous Drain Current
IDM*
IS*
TJ
TSTG
Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
PD* Maximum Power Dissipation
RqJA* Thermal Resistance-Junction to Ambient
Note : *Surface Mounted on 1in2 pad area, t £ 10sec.
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Rating
20
±10
8
6.5
32
1
150
-55 to 150
2
1.28
62.5
Electrical Characteristics (TA = 25°C unless otherwise noted)
Unit
V
A
A
°C
W
°C/W
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-State Resistance
VSDa Diode Forward Voltage
Gate Charge Characteristics b
VGS=0V, IDS=250mA
VDS=16V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±10V, VDS=0V
VGS=4.5V, IDS=8A
VGS=2.5V, IDS=6.8A
ISD=1A, VGS=0V
20
-
-
0.5
-
-
-
-
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=10V, VGS=4.5V,
IDS=8A
-
-
-
Typ.
-
-
-
0.7
-
16
21
0.75
11.3
2.7
3.5
Max.
-
1
30
1.1
±10
20
29
1.3
17
-
-
Unit
V
mA
V
mA
mW
V
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - April, 2014
2
www.sinopowersemi.com

2 Page

SM9926DSK equivalent
SM9926DSK
Typical Operating Characteristics (Cont.)
®
Output Characteristics
32
V =3,4,5,6,7,8,9,10V
GS
28
24 2V
20
16
12
8
1.5V
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
36
32
28
24 VGS=2.5V
20
16 VGS=4.5V
12
8
4
0 5 10 15 20 25 30
ID - Drain Current (A)
Transfer Characteristics
60
I =8A
DS
50
40
30
20
10
0
1 2 3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS=250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - April, 2014
5
www.sinopowersemi.com

5 Page

SM9926DSK diode, scr
SM9926DSK
Carrier Tape & Reel Dimensions
OD0
P0 P2
P1
A
®
K0
SECTION A-A
A0
B
OD1 B
SECTION B-B
A
d
T1
Application
SOP-8
A
330.0±
2.00
P0
4.0±0.10
H T1 C
d
50 MIN.
12.4+2.00 13.0+0.50
-0.00
-0.20
1.5 MIN.
P1 P2 D0 D1
8.0±0.10
2.0±0.05
1.5+0.10
-0.00
1.5 MIN.
D W E1 F
20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05
T A0 B0 K0
0.6+0.00
-0.40
6.40±0.20 5.20±0.20 2.10±0.20
(mm)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - April, 2014
9
www.sinopowersemi.com

9 Page





Information Total 11 Pages
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