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PDF SIHF35N60E Data sheet ( Hoja de datos )
| Número de pieza | SIHF35N60E | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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SiHF35N60E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) typ. () at 25 °C
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
650
VGS = 10 V
132
22
46
Single
0.082
TO-220 FULLPAK
D
G
GDS
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
FEATURES
• A specific on resistance (m-cm2) reduction of
25 %
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Power factor correction power supplies (PFC)
• Hard switching PWM stages
• Computing
- Switch mode power supplies (SMPS)
• Lighting
- Light emitting diode (LED)
- High intensity discharge (HID)
• Telecom
- Server power supplies
• Renewable energy
- Photovoltaic inverters
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Uniterruptable power supplies
TO-220 FULLPAK
SiHF35N60E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) e
Pulsed Drain Current a
VGS at 10 V
TC = 25 °C
TC = 100 °C
Linear Derating Factor
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt d
TJ = 125 °C
Soldering Recommendations (Peak temperature) c
For 10 s
VDS
VGS
ID
IDM
EAS
PD
TJ, Tstg
dV/dt
Mounting Torque
M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 7 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
e. Limited by maximum junction temperature.
LIMIT
600
± 30
32
20
80
0.31
691
39
-55 to +150
57
31
300
0.6
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
Nm
S16-1602-Rev. B, 15-Aug-16
1
Document Number: 91582
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
SiHF35N60E
Vishay Siliconix
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Single Pulse
0.001
0.01
Pulse Time (s)
0.1
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
1
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 13 - Switching Time Test Circuit
VDS
VDS
tp
VDD
IAS
Fig. 16 - Unclamped Inductive Waveforms
VDS
90 %
10 V
QGS
QG
QGD
10 %
VGS
td(on) tr
td(off) tf
Fig. 14 - Switching Time Waveforms
VG
Charge
Fig. 17 - Basic Gate Charge Waveform
VDS
Vary tp to obtain
required IAS
RG
10 V
tp
L
D.U.T
IAS
0.01 Ω
+
- VDD
Fig. 15 - Unclamped Inductive Test Circuit
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 18 - Gate Charge Test Circuit
S16-1602-Rev. B, 15-Aug-16
5
Document Number: 91582
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SIHF35N60E.PDF ] | |
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