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PDF SI3429EDV Data sheet ( Hoja de datos )
| Número de pieza | SI3429EDV | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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Si3429EDV
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
-20
RDS(on) (Ω) MAX.
0.0210 at VGS = -4.5 V
0.0240 at VGS = -2.5 V
0.0380 at VGS = -1.8 V
ID (A) a, e
-8
-8
-8
Qg (TYP.)
43.2 nC
TSOP-6 Single
S
4
D
5
D
6
1
D
Top View
2
D
3
G
Marking Code: BM
Ordering Information:
Si3429EDV-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg tested
• Built-in ESD protection
- Typical ESD performance 3000 V
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Power management for portable
and consumer
- Load switches
- DC/DC converters
G
S
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 μs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
LIMIT
-20
±8
-8 e
-8 e
-8 b, c, e
-6.4 b, c
-40
-3.5
-1.7 b, c
4.2
2.7
2 b, c
1.3 b, c
-55 to 150
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Notes
a. TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 110 °C/W.
e. Package limited.
SYMBOL
RthJA
RthJF
TYPICAL
45
25
MAXIMUM
62.5
30
UNIT
°C/W
S14-0913-Rev. A, 28-Apr-14
1
Document Number: 62946
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si3429EDV
Vishay Siliconix
100
Limited by RDS(on)*
10
Limited by IDM
100 μs
1 ms
1 10 ms
100 ms
0.1 10 s,1 s
DC
TA = 25 °C
0.01 BVDSS Limited
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
14
10.5
7
3.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
5 1.4
4
1.1
3
0.7
2
0.4
1
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power Junction-to-Foot
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power Junction-to-Ambient
150
* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-0913-Rev. A, 28-Apr-14
5
Document Number: 62946
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
www.vishay.com
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 13-Jun-16
1 Document Number: 91000
11 Page | ||
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