HS-1840BRH Datasheet PDF - Intersil
Part Number | HS-1840BRH | |
Description | Rad-Hard 16 Channel BiCMOS Analog Multiplexer | |
Manufacturers | Intersil | |
Logo | ||
There is a preview and HS-1840BRH download ( pdf file ) link at the bottom of this page. Total 7 Pages |
Preview 1 page No Preview Available ! Rad-Hard 16 Channel BiCMOS Analog Multiplexer with
High-Z Analog Input Protection
HS-1840ARH, HS-1840AEH,
HS-1840BRH, HS-1840BEH
The HS-1840ARH, HS-1840AEH, HS-1840BRH and HS-1840BEH are
radiation hardened, monolithic 16 channel multiplexers constructed
with the Intersil Rad-Hard Silicon Gate, bonded wafer, Dielectric
Isolation process. They are designed to provide a high input impedance
to the analog source if device power fails (open), or the analog signal
voltage inadvertently exceeds the supply by up to 35V, regardless of
whether the device is powered on or off. Excellent for use in redundant
applications, since the secondary device can be operated in a standby
unpowered mode affording no additional power drain. More
significantly, a very high impedance exists between the active and
inactive devices preventing any interaction. One of sixteen channel
selections is controlled by a 4-bit binary address plus an Enable-Inhibit
input which conveniently controls the ON/OFF operation of several
multiplexers in a system. All inputs have electrostatic discharge
protection. The HS-1840ARH, HS-1840AEH, HS-1840BRH and
HS-1840BEH are processed and screened in full compliance with
MIL-PRF-38535 and QML standards. The devices are available in a
28 Ld SBDIP and a 28 Ld Ceramic Flatpack.
Specifications for Rad Hard QML devices are controlled by the
Defense Logistics Agency Land and Maritime (DLA). The SMD
numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are contained in
SMD 5962-95630.
Features
• Electrically screened to SMD # 5962-95630
• QML qualified per MIL-PRF-38535 requirements
• Pin-to-pin for Intersil’s HS-1840RH and HS-1840/883S
• Improved radiation performance
- Gamma dose () 3x105RAD(Si)
• Improved rDS(ON) Linearity
• Improved access time 1.5µs (Max) over temp and post rad
• High analog input impedance 500Mduring power loss (open)
• 35V input overvoltage protection (power on or off)
• Dielectrically isolated device islands
• Excellent in Hi-Rel redundant systems
• Break-before-make switching
• No latch-up
Pin Configuration
HS1-1840ARH, HS1-1840AEH, HS1-1840BRH,
HS1-1840BEH
(28 LD SBDIP) CDIP2-T28
TOP VIEW
+VS 1
NC 2
NC 3
IN 16 4
IN 15 5
IN 14 6
IN 13 7
IN 12 8
IN 11 9
IN 10 10
IN 9 11
GND 12
(+5VS) VREF 13
ADDR A3 14
28 OUT
27 -VS
26 IN 8
25 IN 7
24 IN 6
23 IN 5
22 IN 4
21 IN 3
20 IN 2
19 IN 1
18 ENABLE
17 ADDR A0
16 ADDR A1
15 ADDR A2
HS9-1840ARH, HS9-1840AEH, HS9-1840BRH, HS9-1840BEH
(28 LD FLATPACK) CDFP3-F28
TOP VIEW
+VS
NC
NC
IN 16
IN 15
IN 14
IN 13
IN 12
IN 11
IN 10
IN 9
GND
(+5VS) VREF
ADDR A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 OUT
27 -VS
26 IN 8
25 IN 7
24 IN 6
23 IN 5
22 IN 4
21 IN 3
20 IN 2
19 IN 1
18 ENABLE
17 ADDR A0
16 ADDR A1
15 ADDR A2
May 23, 2013
FN4355.6
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2002, 2009-2012, 2013. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
|
|
HS-1840ARH, HS-1840AEH, HS-1840BRH, HS-1840BEH
Die Characteristics
DIE DIMENSIONS:
(2820µmx4080µm x 483µm 25.4m)
111 milsx161 milsx19 mils 1 mil
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorus Silicon Glass)
Thickness: 8.0kÅ 1kÅ
Top Metallization:
Type: AlSiCu
Thickness: 16.0kÅ 2kÅ
Backside Finish:
Silicon
Metallization Mask Layout
HS-1840ARH, HS-1840BRH
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
Modified SEM
Transistor Count:
407
Process:
Radiation Hardened Silicon Gate,
DI Wafer, Dielectric Isolation
IN8
-V
OUT
+V
IN16
ENABLE
A0
A1
A2
A3
VREF
GND
5 FN4355.6
May 23, 2013
Preview 5 Page |
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Information | Total 7 Pages | |
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