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PDF RB098BM100 Data sheet ( Hoja de datos )
| Número de pieza | RB098BM100 | |
| Descripción | Schottky Barrier Diode | |
| Fabricantes | ROHM Semiconductor | |
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Schottky Barrier Diode
RB098BM100
Applications
General rectification
Dimensions (Unit : mm)
Datasheet
Land size figure (Unit : mm)
6.0
Features
1) Power mold type (TO-252)
2) Cathode common dual type
3) High reliability
4) Super low IR
Construction
Silicon epitaxial planar type
12
1.6 1.6
TO-252
2.3 2.3
ROHM : TO-252
JEITA : SC-63
1 : Manufacture Date
2 : Serial number
Structure
Cathode
Taping specifications (Unit : mm)
Anode Anode
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
VRM
VR
Io
IFSM
Operating junction temperature
Storage temperature
Tj
Tstg
Electrical Characteristics (Tj= 25°C)
Parameter
Symbol
Forward voltage
Reverse current
Thermal resistance
VF
IR
Rth(j-c)
Conditions
Duty≦0.5
Direct reverse voltage
60Hz half sin wave, resistive load,
IO/2 per diode, Tc=120ºC Max.
60Hz half sin wave, Non-repetitive at
Ta=25ºC , 1cycle, per diode
-
-
Limits Unit
110 V
100 V
6A
100 A
150 °C
55 to 150 °C
Conditions
IF=3A
VR=100V
Junction to case
Min. Typ. Max. Unit
- - 0.77 V
- - 3 A
- - 6 °C/W
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2016.11 - Rev.C
1 page  
RB098BM100
Electrical Characteristic Curves
Data Sheet
100
10
Rth(j-a)
Rth(j-c)
1
IM=100mA
IF=10A
time
1ms300s
0.1
0.001 0.01 0.1 1 10 100
TIME : t (s)
Rth-t CHARACTERISTICS
1000
16
14
12
DC
10
8
IO
0A
0V
VR t
T
D=t/T
VR=VRM/2
Tj=150°C
D = 1/2
6
4 Sin(θ=180)
2
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta (°C)
DERATING CURVE (Io-Ta)
16
14
12 DC
10
8 D = 1/2
IO
0A
0V
VR t
T
D=t/T
VR=VRM/2
Tj=150°C
6
4 Sin(θ=180)
2
0
0 25 50 75 100 125 150
CASE TEMPERATURE : Tc (°C)
DERATING CURVE (Io-Tc)
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/5
2016.11 - Rev.C
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RB098BM100.PDF ] | |
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