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What is RB088T100FH?

This electronic component, produced by the manufacturer "ROHM Semiconductor", performs the same function as "Schottky Barrier Diode".


RB088T100FH Datasheet PDF - ROHM Semiconductor

Part Number RB088T100FH
Description Schottky Barrier Diode
Manufacturers ROHM Semiconductor 
Logo ROHM Semiconductor Logo 


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Schottky Barrier Diode
RB088T100FH
Application
Switching power supply
Dimensions (Unit : mm)
4.5±00..31
Datasheet
AEC-Q101 Qualified
Structure
Features
1) Cathode common type
2) High reliability
3) Super low IR
10.0±
0.3
0.1
3.2±0.2
1
1.2
2.8±00..21
(1) (2) (3)
Anode Cathode Anode
Construction
Silicon epitaxial planar type
1.3
0.8
2.45±0.5 2.45±0.5
(1) (2) (3)
2.6±0.5
0.75±00..015
ROHM : TO220FN
1 : Manufacture Date
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
110 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load, IO/2 per diode, Tc=137ºC Max.
60Hz half sin wave, Non-repetitive at
Ta=25ºC, 1cycle, per diode
Operating junction temperature
Tj
-
100
10
100
150
V
A
A
°C
Storage temperature
Tstg
- 55 to 150 °C
Electrical and Thermal Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Forward voltage
VF IF=5A
Reverse current
IR VR=100V
Thermal resistance
Rth(j-c)
Junction to case
Min. Typ. Max. Unit
- - 0.87 V
- - 5 A
- - 2 °C / W
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.08 - Rev.A

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RB088T100FH equivalent
RB088T100FH
Electrical Characteristic Curves
Data Sheet
10
Rth(j-a)
Rth(j-c)
1
Glass epoxy board mounted
IM=100mA
IF=5A
time
0.1
0.001 0.01 0.1
1ms300s
1 10
100
TIME : t(s)
Rth-t CHARACTERISTICS
1000
30
25
20 DC
IO
0A
0V
VR t
T
15 D = 1/2
10
5 Sin(θ=180)
D=t/T
VR=VRM/2
Tj=150°C
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
30
25
20 DC
IO
0A
0V
VR t
T
D=t/T
VR=VRM/2
Tj=150°C
15 D = 1/2
10
5 Sin(θ=180)
0
0 25 50 75 100 125 150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
30
25
20
15 AVE. : 10.9kV
10
AVE. : 3.9kV
5
0 C=200pF C=100pF
R=0
R=1.5k
ESD DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/5
2015.08 - Rev.A


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Featured Datasheets

Part NumberDescriptionMFRS
RB088T100FHThe function is Schottky Barrier Diode. ROHM SemiconductorROHM Semiconductor

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