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PDF WFF20N60S Data sheet ( Hoja de datos )
| Número de pieza | WFF20N60S | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Winsemi | |
| Logotipo |  |
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WFF20N60S
Silicon N-Channel MOSFET
Features
� Ultra low Rdson
� Ultra-low Gate charge(Typical 65nC)
� 100% UIS Tested
� RoHS compliant
General Description
Winsemi Power MOSFET is fabricated using advanced super
junction technology.The resulting device has extremely low on
resistance,making it especially suitable for applic ations which
require superior power density and outstanding efficienc y.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
ID (@Tc=100℃)
IDM Drain Current Pulsed1)
VGS Gate to Source Voltage
EAS Single Pulse Avalanche Energy2)
IAR Single Pulse Avalanche Current1)
EAR Repetitive Avalanche Energy 1)
Total Power Dissipation(@Tc=25℃)
PD
-Derate above 25℃
TJ Junction Temperature
Tstg Storage Temperature
IS Continuous diode forward current
IS,pulse Diode pulse current
Value
600
20
13
60
±30
700
20
20.5
34
0.28
150
-55~150
20
60
Units
V
A
A
V
mJ
A
mJ
W
W/℃
℃
℃
A
A
Thermal Characteristics
Symbol
Parameter
RQJC
R QJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction -to -Ambient
Value
Units
Min Typ Max
- - 3.6 ℃/W
- - 80 ℃/W
WT-F034-Rev.A1 Nov.2013
Copyr ight@Winsemi Microelectronics Co., Ltd., All right reserved.
1 page  
WFF20N60S
Fig.11 Gate Charge Test Circuit & Waveform
Fig.12 Switching Test Circuit & Waveforms
Fig.13 Unclamped Inductive Switching Test Circuit & Waveforms
Steady, keep you advance
5/ 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WFF20N60S.PDF ] | |
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