K2737 Datasheet PDF - Hitachi Semiconductor
| Part Number | K2737 | |
| Description | MOSFET ( Transistor ) - 2SK2737 | |
| Manufacturers | Hitachi Semiconductor | |
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2SK2737
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 10 mΩ typ.
• 4V gate drive devices.
• High speed switching
Outline
TO–220CFM
ADE-208-533B(Z)
3rd. Edition
Jun 1998
D
G
123
1. Gate
2. Drain
3. Source
S
|
| |
 
2SK2737
1000
500
Body–Drain Diode Reverse
Recovery Time
200
100
50
20 di / dt = 50 A / µs
10
0.1 0.3
VGS = 0, Ta = 25 °C
1 3 10 30 100
Reverse Drain Current I DR (A)
10000
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
500
Ciss
Coss
Crss
200
100 VGS = 0
f = 1 MHz
50
0 10 20 30 40 50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
50 20
I D = 45 A
40
16
30
VDS
20
VGS
VDD = 5 V
10 V
15 V
12
8
10 VDD = 15 V
10 V
4
5V 0
0 20 40 60 80 100
Gate Charge Qg (nc)
1000
Switching Characteristics
500
t d(off)
200
tf
100 t r
50 t d(on)
20
10
0.1
VGS = 10 V, V DD = 10 V
PW = 5 µs, duty < 1 %
0.3 1 3 10 30 100
Drain Current I D (A)
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for K2737 electronic component. |
| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ K2737.PDF Datasheet ] | |
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