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PDF MJD31CUQ Data sheet ( Hoja de datos )

Número de pieza MJD31CUQ
Descripción 100V NPN HIGH VOLTAGE TRANSISTOR
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MJD31CUQ
100V NPN HIGH VOLTAGE TRANSISTOR IN TO2M52 (DPAK)
Description
This Bipolar Junction Transistor (BJT) is designed to meet the
stringent requirements of Automotive Applications.
Features
BVCEO > 100V
IC = 3A high Continuous Collector Current
ICM = 5A Peak Pulse Current
Ideal for Power Switching or Amplification Applications
Complementary PNP Type: MJD32CUQ
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, "Green" Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.34 grams (Approximate)
TO252 (DPAK)
C
B
Top View
E
Device Schematic
Pin Out Configuration
Top View
Ordering Information (Notes 4 & 5)
Part number
MJD31CUQ-13
Compliance
Automotive
Marking
MJD31CU
Reel size (inches)
13
Tape width (mm)
16
Quantity per reel
2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and
Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total
Br + Cl) and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
MJD31CU
MJD31CU = Product Type Marking Code
= Manufacturers’ Code Marking
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
MJD31CUQ
Document number : DS39133 Rev. 1 - 2
1 of 7
www.diodes.com
August 2016
© Diodes Incorporated

1 page




MJD31CUQ pdf
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1,000
N
GAI
NT
RE
R
100
U
C
C
D
h, FE
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
VCE = 4V
1
R
MTTIE
E
R-
O
CT
GE()V
OLTA
V
E
OLL
C
, T)SA
(E
VC
N
O
ATI
R
U
AT
S
0.1
IC / I B = 8
MJD31CUQ
M
TA= 150°C
TA= 85°C
TA= 25°C
TA= -55°C
10
1 10 100 1,000 10,000
IC, COLLECTOR CURRENT (mA)
Figure 1 Typical DC Current Gain vs. Collector Current
GE(V) 1.2
VCE = 4V
OLTA 1.0
V
N
O
0.8
N-
R
TA = -55°C
U
T 0.6
R
MITTE
E-E
TA = 25°C
0.4 TA = 85°C
S
BA 0.2 TA = 150°C
, )N
O
V(BE
0
1
10
100 1,000 10,000
IC, COLLECTOR CURRENT (mA)
Figure 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
f = 1MHz
0.01
1 10 100 1,000 10,000
IC, COLLECTOR CURRENT (mA)
Figure 2 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
()GEV 1.2
TOLA 1.0
IC/I B= 8
V
N
O
TAI
0.8
TA = -55°C
R
U
TA 0.6
S TA = 25°C
R
TTE 0.4 TA = 85°C
MI
E
-E TA = 150°C
AS 0.2
B
, T)SA 0
V(BE 1
10 100 1,000
IC, COLLECTOR CURRENT (mA)
10,000
Figure 4 Typical Base-Emitter Saturation Voltage
vs. Collector Current
100
Cibo
10
Cobo
1
0.1 1
10 100
VR, REVERSE VOLTAGE (V)
Figure 5 Typical Capacitance Characteristics
MJD31CUQ
Document number : DS39133 Rev. 1 - 2
5 of 7
www.diodes.com
August 2016
© Diodes Incorporated

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