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PDF CY7C1424KV18 Data sheet ( Hoja de datos )
| Número de pieza | CY7C1424KV18 | |
| Descripción | 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture | |
| Fabricantes | Cypress Semiconductor | |
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CY7C1423KV18/CY7C1424KV18
36-Mbit DDR II SIO SRAM Two-Word
Burst Architecture
36-Mbit DDR II SIO SRAM Two-Word Burst Architecture
Features
■ 36-Mbit density (2M × 18, 1M × 36)
■ 333 MHz clock for high bandwidth
■ Two-word burst for reducing address bus frequency
■ Double data rate (DDR) interfaces (data transferred at
666 MHz) at 333 MHz
■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■ Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
■ Echo clocks (CQ and CQ) simplify data capture in high speed
systems
■ Synchronous internally self timed writes
■ DDR II operates with 1.5 cycle read latency when DOFF is
asserted HIGH
■ Operates similar to DDR I device with 1 cycle read latency when
DOFF is asserted LOW
■ 1.8 V core power supply with HSTL inputs and outputs
■ Variable drive HSTL output buffers
■ Expanded HSTL output voltage (1.4 V to VDD)
❐ Supports both 1.5 V and 1.8 V IO supply
■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)
■ Offered in both Pb-free and non Pb-free packages
■ JTAG 1149.1 compatible test access port
■ Phase locked loop (PLL) for accurate data placement
Configurations
CY7C1423KV18 – 2M × 18
CY7C1424KV18 – 1M × 36
Functional Description
The CY7C1423KV18, and CY7C1424KV18 are 1.8 V
synchronous pipelined SRAMs, equipped with DDR II SIO
(double data rate separate I/O) architecture. The DDR II SIO
consists of two separate ports: the read port and the write port to
access the memory array. The read port has data outputs to
support read operations and the write port has data inputs to
support write operations. The DDR II SIO has separate data
inputs and data outputs to completely eliminate the need to
“turnaround” the data bus required with common I/O devices.
Access to each port is accomplished through a common address
bus. Addresses for read and write are latched on alternate rising
edges of the input (K) clock. Write data is registered on the rising
edges of both K and K. Read data is driven on the rising edges
of C and C if provided, or on the rising edge of K and K if C/C are
not provided. Each address location is associated with two 18-bit
words in the case of CY7C1423KV18, and two 36-bit words in
the case of CY7C1424KV18 that burst sequentially into or out of
the device.
Asynchronous inputs include an output impedance matching
input (ZQ). Synchronous data outputs are tightly matched to the
two output echo clocks CQ/CQ, eliminating the need to capture
data separately from each individual DDR II SIO SRAM in the
system design. Output data clocks (C/C) enable maximum
system clocking and data synchronization flexibility.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
For a complete list of related documentation, click here.
Selection Guide
Maximum operating frequency
Maximum operating current
Description
× 18
× 36
333 MHz
333
490
600
300 MHz
300
460
Not Offered
250 MHz
250
430
490
Unit
MHz
mA
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-57829 Rev. *I
• San Jose, CA 95134-1709 • 408-943-2600
Revised November 16, 2016
1 page  
CY7C1423KV18/CY7C1424KV18
Pin Definitions
Pin Name
I/O
Pin Description
D[x:0]
LD
Input-
synchronous
Input-
synchronous
Data input signals. Sampled on the rising edge of K and K clocks during valid write operations.
CY7C1423KV18 - D[17:0]
CY7C1424KV18 - D[35:0]
Synchronous load. This input is brought LOW when a bus cycle sequence is defined. This definition
includes address and read/write direction. All transactions operate on a burst of 2 data (one clock period
of bus activity).
BWS0,
BWS1,
BWS2,
BWS3
Input-
synchronous
Byte write select 0, 1, 2, and 3 active LOW. Sampled on the rising edge of the K and K clocks during
write operations. Used to select which byte is written into the device during the current portion of the write
operations. Bytes not written remain unaltered.
CY7C1423KV18 BWS0 controls D[8:0], BWS1 controls D[17:9].
CY7C1424KV18BWS0 controls D[8:0], BWS1 controls D[17:9],BWS2 controls D[26:18] and BWS3 controls
D[35:27].
All the byte write selects are sampled on the same edge as the data. Deselecting a byte write select
ignores the corresponding byte of data and it is not written into the device.
A Input- Address inputs. Sampled on the rising edge of the K clock during active read and write operations. These
synchronous address inputs are multiplexed for both read and write operations. Internally, the device is organized as
2M × 18 (2 arrays each of 1M × 18) for CY7C1423KV18 and 1M × 36 (2 arrays each of 512K × 36) for
CY7C1424KV18. Therefore, only 20 address inputs are needed to access the entire memory array of
CY7C1423KV18 and 19 address inputs for CY7C1424KV18. These inputs are ignored when the
appropriate port is deselected.
Q[x:0]
R/W
Outputs-
synchronous
Input-
synchronous
Data output signals. These pins drive out the requested data during a read operation. Valid data is driven
out on the rising edge of both the C and C clocks during read operations, or K and K when in single clock
mode. When the read port is deselected, Q[x:0] are automatically tristated.
CY7C1423KV18 Q[17:0]
CY7C1424KV18 Q[35:0]
Synchronous read/write input. When LD is LOW, this input designates the access type (read when
R/W is HIGH, write when R/W is LOW) for the loaded address. R/W must meet the setup and hold times
around the edge of K.
C Input clock Positive input clock for output data. C is used in conjunction with C to clock out the read data from the
device. C and C can be used together to deskew the flight times of various devices on the board back to
the controller. See Application Example on page 8 for further details.
C Input clock Negative input clock for output data. C is used in conjunction with C to clock out the read data from
the device. C and C can be used together to deskew the flight times of various devices on the board back
to the controller. See Application Example on page 8 for further details.
K Input clock Positive input clock input. The rising edge of K is used to capture synchronous inputs to the device and
to drive out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising edge of K.
K Input clock Negative input clock input. K is used to capture synchronous inputs being presented to the device and
to drive out data through Q[x:0] when in single clock mode.
CQ Echo clock CQ referenced with respect to C. This is a free running clock and is synchronized to the input clock for
output data (C) of the DDR II. In the single clock mode, CQ is generated with respect to K. The timings
for the echo clocks is shown in the Switching Characteristics on page 23.
CQ Echo clock CQ referenced with respect to C. This is a free running clock and is synchronized to the input clock for
output data (C) of the DDR II. In the single clock mode, CQ is generated with respect to K. The timings
for the echo clocks is shown in the Switching Characteristics on page 23.
ZQ
Input
Output impedance matching input. This input is used to tune the device outputs to the system data
bus impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 × RQ, where RQ is a resistor
connected between ZQ and ground. Alternatively, this pin can be connected directly to VDDQ, which
enables the minimum impedance mode. This pin cannot be connected directly to GND or left
unconnected.
Document Number: 001-57829 Rev. *I
Page 5 of 31
5 Page 
CY7C1423KV18/CY7C1424KV18
IEEE 1149.1 Serial Boundary Scan (JTAG)
These SRAMs incorporate a serial boundary scan test access
port (TAP) in the FBGA package. This part is fully compliant with
IEEE Standard #1149.1-2001. The TAP operates using JEDEC
standard 1.8 V IO logic levels.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are
internally pulled up and may be unconnected. They may
alternatively be connected to VDD through a pull-up resistor. TDO
must be left unconnected. Upon power-up, the device comes up
in a reset state, which does not interfere with the operation of the
device.
Test Access Port
Test Clock
The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.
Test Mode Select (TMS)
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. This pin may be left
unconnected if the TAP is not used. The pin is pulled up
internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI pin is used to serially input information into the registers
and can be connected to the input of any of the registers. The
register between TDI and TDO is chosen by the instruction that
is loaded into the TAP instruction register. For information about
loading the instruction register, see the TAP Controller State
Diagram on page 13. TDI is internally pulled up and can be
unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register.
Test Data-Out (TDO)
The TDO output pin is used to serially clock data out from the
registers. The output is active, depending upon the current state
of the TAP state machine (see Instruction Codes on page 17).
The output changes on the falling edge of TCK. TDO is
connected to the least significant bit (LSB) of any register.
Performing a TAP Reset
A reset is performed by forcing TMS HIGH (VDD) for five rising
edges of TCK. This reset does not affect the operation of the
SRAM and is performed when the SRAM is operating. At
power-up, the TAP is reset internally to ensure that TDO comes
up in a high Z state.
TAP Registers
Registers are connected between the TDI and TDO pins to scan
the data in and out of the SRAM test circuitry. Only one register
can be selected at a time through the instruction registers. Data
is serially loaded into the TDI pin on the rising edge of TCK. Data
is output on the TDO pin on the falling edge of TCK.
Instruction Register
Three-bit instructions are serially loaded into the instruction
register. This register is loaded when it is placed between the TDI
and TDO pins, as shown in TAP Controller Block Diagram on
page 14. Upon power-up, the instruction register is loaded with
the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state, as described
in the previous section.
When the TAP controller is in the Capture-IR state, the two least
significant bits are loaded with a binary “01” pattern to enable
fault isolation of the board level serial test path.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This enables shifting of data through the SRAM
with minimal delay. The bypass register is set LOW (VSS) when
the BYPASS instruction is executed.
Boundary Scan Register
The boundary scan register is connected to all of the input and
output pins on the SRAM. Several No Connect (NC) pins are also
included in the scan register to reserve pins for higher density
devices.
The boundary scan register is loaded with the contents of the
RAM input and output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and TDO
pins when the controller is moved to the Shift-DR state. The
EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions are
used to capture the contents of the input and output ring.
The Boundary Scan Order on page 18 shows the order in which
the bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected to
TDI, and the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and is shifted out when the TAP controller is in the
Shift-DR state. The ID register has a vendor code and other
information described in Identification Register Definitions on
page 17.
TAP Instruction Set
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in Instruction
Codes on page 17. Three of these instructions are listed as
RESERVED and must not be used. The other five instructions
are described in this section in detail.
Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
TDO. During this state, instructions are shifted through the
instruction register through the TDI and TDO pins. To execute
the instruction after it is shifted in, the TAP controller must be
moved into the Update-IR state.
Document Number: 001-57829 Rev. *I
Page 11 of 31
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet CY7C1424KV18.PDF ] | |
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