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What is CY7C1371KVE33?

This electronic component, produced by the manufacturer "Cypress Semiconductor", performs the same function as "18-Mbit (512K x 36/1M x 18) Flow-Through SRAM".


CY7C1371KVE33 Datasheet PDF - Cypress Semiconductor

Part Number CY7C1371KVE33
Description 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
Manufacturers Cypress Semiconductor 
Logo Cypress Semiconductor Logo 


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CY7C1371KV33
CY7C1371KVE33
CY7C1373KV33
18-Mbit (512K × 36/1M × 18) Flow-Through SRAM
with NoBL™ Architecture (With ECC)
18-Mbit (512K × 36/1M × 18) Flow-through SRAM with NoBL™ Architecture (With ECC)
Features
No Bus Latency(NoBL) architecture eliminates dead cycles
between write and read cycles
Supports up to 133-MHz bus operations with zero wait states
Data is transferred on every clock
Pin-compatible and functionally equivalent to ZBT™ devices
Internally self-timed output buffer control to eliminate the need
to use OE
Registered inputs for flow through operation
Byte write capability
3.3 V/2.5 V I/O power supply (VDDQ)
Fast clock-to-output times
6.5 ns (for 133-MHz device)
Clock enable (CEN) pin to enable clock and suspend operation
Synchronous self-timed writes
Asynchronous output enable
Available in JEDEC-standard Pb-free 100-pin TQFP packages
Three chip enables for simple depth expansion
Automatic power-down feature available using ZZ mode or CE
deselect
Burst capability – linear or interleaved burst order
Low standby power
On chip Error Correction Code (ECC) to reduce Soft Error Rate
(SER)
Functional Description
The CY7C1371KV33/CY7C1371KVE33/CY7C1373KV33 are
3.3 V, 512K × 36/1M × 18 synchronous flow through burst SRAM
designed specifically to support unlimited true back-to-back
read/write operations with no wait state insertion. The
CY7C1371KV33/CY7C1371KVE33/CY7C1373KV33
are
equipped with the advanced No Bus Latency (NoBL) logic
required to enable consecutive read/write operations with data
being transferred on every clock cycle. This feature dramatically
improves the throughput of data through the SRAM, especially
in systems that require frequent write-read transitions.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. The clock input is qualified by the
clock enable (CEN) signal, which when deasserted suspends
operation and extends the previous clock cycle. Maximum
access delay from the clock rise is 6.5 ns (133-MHz device).
Write operations are controlled by the two or four byte write
select (BWX) and a write enable (WE) input. All writes are
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous chip enables (CE1, CE2, CE3) and an
asynchronous output enable (OE) provide for easy bank
selection and output tristate control. To avoid bus contention, the
output drivers are synchronously tristated during the data portion
of a write sequence.
Selection Guide
Maximum access time
Maximum operating current
Description
133 MHz 100 MHz Unit
6.5 8.5 ns
× 18 129
114 mA
× 36 149
134 mA
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-97852 Rev. *E
• San Jose, CA 95134-1709 • 408-943-2600
Revised July 1, 2016

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CY7C1371KVE33 equivalent
CY7C1371KV33
CY7C1371KVE33
CY7C1373KV33
Pin Configurations
Figure 1. 100-pin TQFP (14 × 20 × 1.4 mm) pinout
CY7C1371KV33/CY7C1371KVE33
BYTE C
BYTE D
DQPC
DQC
DQC
VDDQ
VSS
DQC
DQC
DQC
DQC
VSS
VDDQ
DQC
DQC
NC
VDD
NC
VSS
DQD
DQD
VDDQ
VSS
DQD
DQD
DQD
DQD
VSS
VDDQ
DQD
DQD
DQPD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
80 DQPB
79 DQB
78 DQB
77 VDDQ
76 VSS
75
74
DQB
DQB
BYTE B
73 DQB
72 DQB
71 VSS
70 VDDQ
69 DQB
68 DQB
67 VSS
66 NC
65 VDD
64 ZZ
63 DQA
62 DQA
61 VDDQ
60 VSS
59 DQA
58 DQA
57
DQA
BYTE A
56 DQA
55 VSS
54 VDDQ
53 DQA
52 DQA
51 DQPA
Document Number: 001-97852 Rev. *E
Page 5 of 24


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Part Details

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Information Total 24 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
CY7C1371KVE33The function is 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM. Cypress SemiconductorCypress Semiconductor

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