S29XS064R Datasheet PDF - Cypress Semiconductor
| Part Number | S29XS064R | |
| Description | 64 Mbit (4M x 16-bit) Flash | |
| Manufacturers | Cypress Semiconductor | |
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S29VS064R
S29XS064R
64 Mbit (4M x 16-bit), 1.8 V, Multiplexed,
Burst, MirrorBit® Flash
Distinctive Characteristics
Single 1.8 volt read, program and erase
(1.7 to 1.95 volt)
VersatileIO™ Feature
– Device generates data output voltages and tolerates data input
voltages as determined by the voltage on the VCCQ pin
– 1.8 V compatible I/O signals
Address and Data Interface Options
– Address and Data Multiplexed for reduced I/O count
(ADM) S29VS-R
– Address-High, Address-Low, Data Multiplexed for minimum I/O
count (AADM) S29XS-R
Simultaneous Read/Write operation
– Data can be continuously read from one bank while executing
erase/program functions in other bank
– Zero latency between read and write operations
Burst length
– Continuous linear burst
– 8/16 word linear burst with wrap around
Secured Silicon Sector region
– 256 words accessible through a command sequence, 128 words
for the Factory Secured Silicon Sector and 128 words for the
Customer Secured Silicon Sector.
Sector Architecture
– Four 8 kword sectors in upper-most address range
– One hundred twenty-seven 32 kword sectors
– Four banks
Performance Characteristics
Read Access Times
Speed Option (MHz)
Max. Synch. Latency, ns (tIACC)
Max. Synch. Burst Access, ns (tBACC)
Max. Asynch. Access Time, ns (tACC)
Max OE# Access Time, ns (tOE)
108
80
7.6
80
15
Security Features
Dynamic Protection Bit (DYB)
– A command sector protection method to lock combinations of
individual sectors to prevent program or erase operations within
that sector
– Sectors can be locked and unlocked in-system at VCC level
Hardware Sector Protection
– All sectors locked when VPP = VIL
Handshaking feature
– Provides host system with minimum possible latency by
monitoring RDY
Supports Common Flash Memory
Interface (CFI)
Manufactured on 65 nm MirrorBit® process technology
Cycling endurance: 100,000 cycles per sector typical
Data retention: 10 years typical
Data# Polling and toggle bits
– Provides a software method of detecting program and erase
operation completion
Erase Suspend/Resume
– Suspends an erase operation to read data from, or program data
to, a sector that is not being erased, then resumes the erase
operation
Program Suspend/Resume
– Suspends a programming operation to read data from a sector
other than the one being programmed, then resume the
programming operation
Packages
– 44-ball Very Thin FBGA
Typical Program & Erase Times
Single Word Programming
Effective Write Buffer Programming (VCC) Per Word
Effective Write Buffer Programming (VPP) Per Word
Sector Erase (8 kword Sector)
Sector Erase (32 kword Sector)
170 µs
14.1 µs
9 µs
350 ms
800 ms
Current Consumption (typical values)
Continuous Burst Read @ 108 MHz
Simultaneous Operation @ 108 MHz
Program/Erase
Standby Mode
32 mA
71 mA
30 mA
20 µA
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 002-00949 Rev. *G
• San Jose, CA 95134-1709 • 408-943-2600
Revised December 17, 2015
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S29VS064R
S29XS064R
2. Block Diagrams
VCCQ
VCC
VSS
WE#
RESET#
VPP
CE#
OE#
RDY
Buffer
State
Control
Command
Register
RDY
Erase Voltage
Generator
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
A/DQ15–A/DQ0
Input/Output
Buffers
Data
Latch
VCC
Detector
AVD#
CLK
Burst
State
Control
A/DQ15–A/DQ0
Amax–A16
Timer
Burst
Address
Counter
Amax–A0
Note:
Amax indicates the highest order address bit. Amax equals A21 for S29VS/XS064R.
Y-Decoder
X-Decoder
Y-Gating
Cell Matrix
Document Number: 002-00949 Rev. *G
Page 5 of 63
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for S29XS064R electronic component. |
| Information | Total 30 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ S29XS064R.PDF Datasheet ] | |
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