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What is S29WS128P?

This electronic component, produced by the manufacturer "Cypress Semiconductor", performs the same function as "Simultaneous Read/Write Flash".


S29WS128P Datasheet PDF - Cypress Semiconductor

Part Number S29WS128P
Description Simultaneous Read/Write Flash
Manufacturers Cypress Semiconductor 
Logo Cypress Semiconductor Logo 


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S29WS512P
S29WS256P
S29WS128P
512/256/128 Mb (32/16/8 M x 16 bit), 1.8 V,
Simultaneous Read/Write Flash
Features
Single 1.8 V read/program/erase (1.70–1.95 V)
90 nm MirrorBit™ Technology
Simultaneous Read/Write operation with zero latency
Random page read access mode of 8 words with 20 ns intra page
access time
32 Word / 64 Byte Write Buffer
Sixteen-bank architecture consisting of
32/16/8 Mwords for 512/256/128P, respectively
Four 16 Kword sectors at both top and bottom of memory array
510/254/126 64Kword sectors (WS512/256/128P)
Programmable linear (8/16/32) with or without wrap around and
continuous burst read modes
Secured Silicon Sector region consisting of 128 words each for
factory and 128 words for customer
20-year data retention (typical)
Cycling Endurance: 100,000 cycles per sector (typical)
Command set compatible with JEDEC (42.4) standard
Hardware (WP#) protection of top and bottom sectors
Dual boot sector configuration (top and bottom)
Handshaking by monitoring RDY
Offered Packages
– WS512P/WS256P/WS128P: 84-ball FBGA
(11.6 mm x 8 mm)
Low VCC write inhibit
Persistent and Password methods of Advanced Sector Protection
Write operation status bits indicate program and erase operation
completion
Suspend and Resume commands for Program and Erase
operations
Unlock Bypass program command to reduce programming time
Synchronous or Asynchronous program operation, independent of
burst control register settings
ACC input pin to reduce factory programming time
Support for Common Flash Interface (CFI)
General Description
The Spansion S29WS512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These burst mode
Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks using
separate data and address pins. These products can operate up to 104 MHz and use a single VCC of 1.7 V to 1.95 V that makes
them ideal for today’s demanding wireless applications requiring higher density, better performance and lowered power
consumption.
Performance Characteristics
Read Access Times
Speed Option (MHz)
Max. Synch Access Time (tIACC)
Max. Synch. Burst Access, ns (tBACC)
Max OE# Access Time, ns (tOE)
Max. Asynch. Access Time, ns (tACC)
104
103.8
7.6
7.6
80
Current Consumption (typical values)
Continuous Burst Read @ 104 MHz
Simultaneous Operation 104 MHz
Program
Standby Mode
Typical Program & Erase Times
Single Word Programming
Effective Write Buffer Programming (VCC) Per Word
Effective Write Buffer Programming (VACC) Per Word
Sector Erase (16 Kword Sector)
Sector Erase (64 Kword Sector)
36 mA
40 mA
20 mA
20 µA
40 µs
9.4 µs
6 µs
350 ms
600 ms
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 002-01747 Rev. *A
• San Jose, CA 95134-1709 • 408-943-2600
Revised December 17, 2015

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S29WS128P equivalent
3. Block Diagrams
VCC
VSS
VCCQ
AMAX–A0
Bank Address
Bank 0
X-Decoder
WP#
ACC
RESET#
WE#
CEx#
AVD#
RDY
DQ15–DQ0
Bank Address
Bank 1
AMAX–A0
STATE
CONTROL
&
COMMAND
REGISTER
AMAX–A0
X-Decoder
Status
Control
X-Decoder
AMAX–A0
Bank Address
Bank (n-1)
S29WS512P
S29WS256P
S29WS128P
DQ15–DQ0
OE#
DQ15–DQ0
DQ15–DQ0
DQ15–DQ0
Bank Address
X-Decoder
Bank (n)
DQ15–DQ0
Notes:
1. AMAX-A0 = A24-A0 for the WS512P, A23-A0 for the WS256P, and A22-A0 for the WS128P.
2. n = 15 for WS512P / WS256P / WS128P.
4. Physical Dimensions/Connection Diagrams
This section shows the I/O designations and package specifications for the S29WS-P.
4.1 Related Documents
The following documents contain information relating to the S29WS-P devices. Click on the title or go to www.spansion.com to
download the PDF file, or request a copy from your sales office.
Considerations for X-ray Inspection of Surface-Mounted Flash Integrated Circuits
4.2 Special Handling Instructions for FBGA Package
Special handling is required for Flash Memory products in FBGA packages.
Document Number: 002-01747 Rev. *A
Page 5 of 86


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Information Total 30 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
S29WS128JThe function is (S29WS064J / S29WS128J) Burst Mode Flash Memory. SPANSIONSPANSION
S29WS128NThe function is SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY. SPANSIONSPANSION
S29WS128NThe function is Burst Mode Flash Memory. SPANSIONSPANSION

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